IEEE Journal of the Electron Devices Society

SCI期刊
IEEE Journal of the Electron Devices Society
中文名称:
IEEE电子器件学会杂志
期刊缩写:
IEEE J. Electron Devices Soc.
影响因子:
2
ISSN:
print: 2168-6734
研究领域:
Biochemistry, Genetics and Molecular Biology-Biotechnology
h-index:
23
自引率:
4.30%
Gold OA文章占比:
97.60%
原创研究文献占比:
99.31%
SCI收录类型:
Science Citation Index Expanded (SCIE) || Scopus (CiteScore) || Directory of Open Access Journals (DOAJ)
期刊介绍英文:
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
CiteScore:
CiteScoreSJRSNIPCiteScore排名
5.20.5050.955
学科
排名
百分位
大类:Materials Science
小类:Electronic, Optical and Magnetic Materials
90 / 284
68%
大类:Engineering
小类:Electrical and Electronic Engineering
253 / 797
68%
大类:Biochemistry, Genetics and Molecular Biology
小类:Biotechnology
139 / 311
55%
发文信息
中科院SCI期刊分区
大类 小类 TOP期刊 综述期刊
3区 工程技术
4区 工程:电子与电气 ENGINEERING, ELECTRICAL & ELECTRONIC
WOS期刊分区
学科分类
Q3ENGINEERING, ELECTRICAL & ELECTRONIC
历年影响因子
2015年1.5430
2016年3.1410
2017年2.6960
2018年2.0000
2019年2.5550
2020年2.4840
2021年2.5230
2022年2.3000
2023年2.0000
历年发表
2012年0
2013年61
2014年53
2015年91
2016年113
2017年130
2018年191
2019年201
2020年215
2021年198
2022年124
投稿信息
出版语言:
English
出版国家(地区):
UNITED STATES
审稿时长:
9 weeks
出版商:
Institute of Electrical and Electronics Engineers Inc.
编辑部地址:
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141

IEEE Journal of the Electron Devices Society - 最新文献

AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation

Pub Date : 2024-10-28 DOI: 10.1109/JEDS.2024.3486454 Pingyu Cao;Kepeng Zhao;Harm Van Zalinge;Ping Zhang;Miao Cui;Fei Xue

Direct Extraction Methods for RF Characterization of Extrinsic Parasitic Parameters in 28 nm FDSOI MOSFETs Up to 110 GHz

Pub Date : 2024-10-28 DOI: 10.1109/JEDS.2024.3486736 Xuejing Yang;Kyounghoon Yang

The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET

Pub Date : 2024-10-24 DOI: 10.1109/JEDS.2024.3485869 Junghyeon Hwang;Giuk Kim;Hongrae Joh;Jinho Ahn;Sanghun Jeon
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