Design of an Integrated MEMS Magnetic Gradiometer Rejecting Vibrations and Stray Fields

IF 2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Enrico Gasparin;Arno Hoogerwerf;Dara Bayat;Guido Spinola Durante;Yves Petremand;Maurizio Tormen;Michel Despont;Gaël Close
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引用次数: 0

Abstract

Magnetic sensors are often used near current-carrying wires or electrical motors generating significant magnetic interference. To mitigate the effects of these stray fields, the traditional design approach relies on a differential sensing scheme: multiple magnetometers are spaced apart, and the field differences are measured. Despite being rejected, stray fields still constrain the design space. Extra linear range and matched channels are required to accommodate their peak amplitude without saturation or residual common-mode leakage. On the contrary, single-point MEMS gradiometers rely on the force acting on a magnet, which is directly proportional to the magnetic field gradient. The stray field is intrinsically rejected by the magnetic transducing mechanism, even before entering the measurement chain. The range of the measurement chain can then be largely optimized for the gradient, independently of the stray field amplitude. This paper discusses the design of a single-point MEMS gradiometer. By design, it rejects magnetic stray fields and mechanical disturbances like vibrations and gravity. It is the first single-point MEMS gradiometer capable of operating unshielded and in various orientations. The prototype achieves a noise density of 4 nT/mm/ $\sqrt {\mathrm { Hz}}$ within a measurement range of ${\pm } 300~{\mu }$ T/mm. The paper demonstrates the sensor’s effectiveness in a bus-bar current sensing application. Design limitations and future design prospects are also outlined.
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来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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