IEEE Journal of the Electron Devices Society最新文献_第8页

Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors 基于机器学习的 40 纳米 CMOS 晶体管热载流子注入建模

IF 2.3 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-03-21 DOI: 10.1109/JEDS.2024.3380572

Xhesila Xhafa;Ali Doğuş Güngördü;Mustafa Berke Yelten

引用次数: 0

Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models 离子通道和共植入物对硅中离子范围和损伤的影响：利用 PL、SRP、SIMS 和 MC 模型进行的研究

IF 2.3 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-03-19 DOI: 10.1109/JEDS.2024.3379328

Michael I. Current;Takuya Sakaguchi;Yoji Kawasaki;Viktor Samu;Anita Pongracz;Luca Sinko;Árpád Kerekes;Zsolt Durkó

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Conductivity Enhancement of PVD-WS2 Films Using Cl2-Plasma Treatment Followed by Sulfur-Vapor Annealing 利用 Cl2 等离子处理和硫气退火增强 PVD-WS2 薄膜的导电性

IF 2.3 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-03-18 DOI: 10.1109/JEDS.2024.3378745

Keita Kurohara;Shinya Imai;Takuya Hamada;Tetsuya Tatsumi;Shigetaka Tomiya;Kuniyuki Kakushima;Kazuo Tsutsui;Hitoshi Wakabayashi

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Fermi-Level Splitting-Induced Light-Intensity-Dependent Recombination in Fully Ultra-Wide Bandgap Deep-Ultraviolet Photodetector 全超宽带隙深紫外光探测器中的费米级分裂诱导光强相关性重组

IF 2.3 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-03-18 DOI: 10.1109/JEDS.2024.3373905

Wanyu Ma;Maolin Zhang;Lei Wang;Shan Li;Lili Yang;Zeng Liu;Yufeng Guo;Weihua Tang

{"title":"Fermi-Level Splitting-Induced Light-Intensity-Dependent Recombination in Fully Ultra-Wide Bandgap Deep-Ultraviolet Photodetector","authors":"Wanyu Ma;Maolin Zhang;Lei Wang;Shan Li;Lili Yang;Zeng Liu;Yufeng Guo;Weihua Tang","doi":"10.1109/JEDS.2024.3373905","DOIUrl":"10.1109/JEDS.2024.3373905","url":null,"abstract":"Ga2O3-based heterojunction features the capability of self-driven detection, which is reckoned as a promising candidate for the next-generation deep-ultraviolet (DUV) sensing scenarios. Heterojunction consisting of fully ultra-wide bandgap (UWB) semiconductors would prevent additional response in the near-ultraviolet band. In this work, a \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3/AlN heterojunction photodetector is constructed and its operating mechanisms are investigated. By measuring its static current-voltage (I-V) and dynamic current-time (I-t) characteristics, the detection performance, including a photo-to-dark current ratio of \u0000<inline-formula> <tex-math>$8.6times 10,,^{mathrm{ 5}}$ </tex-math></inline-formula>\u0000, a responsivity of 0.41 mA/W, a specific detectivity of \u0000<inline-formula> <tex-math>$3.4times 10,,^{mathrm{ 12}}$ </tex-math></inline-formula>\u0000 Jones, and an external quantum efficiency of 0.2% were achieved under 0 V bias, indicating that the proposed device realized high-performance self-driven detection. Moreover, this work demonstrated the impact of Fermi-level splitting introduced by the enhanced photo illumination on the carrier recombination and the sensing performance. With the increase of light intensity, Fermi levels are separated and available recombination centers are increased, leading to the enhancement of the recombination process and the variation of detection properties. Consequently, this work highlights the potential of the fully UWB heterojunction and provides further optimization guidelines.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10472323","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140171714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs BSIM-CMG 与非晶 InZnO TFT 亚阈值和线性区低频噪声模拟的兼容性

IF 2.3 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-03-14 DOI: 10.1109/JEDS.2024.3375867

Yayi Chen;Xingji Liu;Dengyun Lei;Yuan Liu;Rongsheng Chen;Yao Ni;Hoi-Sing Kwok;Wei Zhong

{"title":"Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs","authors":"Yayi Chen;Xingji Liu;Dengyun Lei;Yuan Liu;Rongsheng Chen;Yao Ni;Hoi-Sing Kwok;Wei Zhong","doi":"10.1109/JEDS.2024.3375867","DOIUrl":"10.1109/JEDS.2024.3375867","url":null,"abstract":"The compatibility of the advanced BSIM-CMG to the low frequency noise (LFN) simulation in amorphous IZO TFTs is evaluated over subthreshold and linear regions. Two kinds of devices with SiO2-SiNx and Al2O3 gate insulators are studied. In these devices, the 1/f noise is confirmed as the main component of LFN. Then the dominated origin of the 1/f noise is explained by the \u0000<inline-formula> <tex-math>$Delta text{N}$ </tex-math></inline-formula>\u0000 model in devices with SiO2-SiNx layers, and by the \u0000<inline-formula> <tex-math>$Delta text{N}$ </tex-math></inline-formula>\u0000-\u0000<inline-formula> <tex-math>$Delta mu $ </tex-math></inline-formula>\u0000 model in devices with Al2O3 layers, respectively. Based on these models, the interficial traps density and the Hooge’s parameters are further calculated, and then applied to the extraction of noise parameters (NOIAeff, NOIB and NOIC) in BSIM-CMG. Compared to the measured data, the simulated results indicate that the noise can be well simulated by the improved BSIM-CMG both in the subthreshold and linear regions of IZO TFTs. It provides a comprehensive evaluation on the suitability of the BSIM-CMG for 1/f noise modelling in amorphous metal oxide TFTs.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10466727","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140147154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An Online Monitoring Method for Bond Wire Fatigue in IGBT Module IGBT 模块中键合线疲劳的在线监测方法

IF 2.3 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-03-10 DOI: 10.1109/JEDS.2024.3399554

Hongtao Liu;Fei Wang;Xiaokang Zhang;Weiyi Xia;Lintao Ren

引用次数: 0

Program Start Bias Grouping to Compensate for the Geometric Property of a String in 3-D NAND Flash Memory 通过程序启动偏置分组补偿 3-D NAND 闪存中字符串的几何特性

IF 2.3 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-03-08 DOI: 10.1109/JEDS.2024.3372971

Sungju Kim;Sangmin Ahn;Sechun Park;Jongwoo Kim;Hyungcheol Shin

{"title":"Program Start Bias Grouping to Compensate for the Geometric Property of a String in 3-D NAND Flash Memory","authors":"Sungju Kim;Sangmin Ahn;Sechun Park;Jongwoo Kim;Hyungcheol Shin","doi":"10.1109/JEDS.2024.3372971","DOIUrl":"10.1109/JEDS.2024.3372971","url":null,"abstract":"The string (STR) with various geometrical profiles in 3-D NAND flash cause the degradation of program efficiency. This is because the program speed differences among WL layers within the STR are caused by the geometrical properties observed through measurement results. In this work, we propose the method to reduce the program speed differences based on a word-line (WL) grouping in terms of threshold voltage (Vth) distribution to compensate for the program start voltage (Vstart). To address various geometrical profiles, we consider a flexible compensation method through \u0000<inline-formula> <tex-math>$Delta $ </tex-math></inline-formula>\u0000Peak_Vth, i.e., the net amount of movement from the erase to the program state. \u0000<inline-formula> <tex-math>$Delta $ </tex-math></inline-formula>\u0000Peak_Vth according to WL layers clearly distinguished the geometrical properties among WL layers, and through this, the linearity of \u0000<inline-formula> <tex-math>$Delta $ </tex-math></inline-formula>\u0000Peak_Vth is frequently observed for specific WL layer intervals with taper profile. Utilizing this linearity, we conducted the WL grouping and successfully demonstrated \u0000<inline-formula> <tex-math>$text{V}_{mathrm{ start}}$ </tex-math></inline-formula>\u0000 compensation by applying the proposed method to each WL group through the measurement of a commercial 3-D NAND package. Moreover, the reduced WL grouping method is also contrived to relax circuit design complications and evaluated the usefulness of the proposed method.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10459337","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140074155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrically Tunable Ideality Factor and Series Resistance of Gate-Controlled Graphene/Pentacene Schottky Junctions 栅极可控石墨烯/五碳烯肖特基结的电可调理想因子和串联电阻

IF 2.3 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-03-06 DOI: 10.1109/JEDS.2024.3397014

Tae Yoon Lee;Yoon-Jeong Kim;Seokhoon Ahn;Dae-Young Jeon

引用次数: 0

Simulation and Optimization of IGZO-Based Neuromorphic System for Spiking Neural Networks 基于 IGZO 的尖峰神经网络神经形态系统的仿真与优化

IF 2.3 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-03-06 DOI: 10.1109/JEDS.2024.3373889

Junhyeong Park;Yumin Yun;Minji Kim;Soo-Yeon Lee

{"title":"Simulation and Optimization of IGZO-Based Neuromorphic System for Spiking Neural Networks","authors":"Junhyeong Park;Yumin Yun;Minji Kim;Soo-Yeon Lee","doi":"10.1109/JEDS.2024.3373889","DOIUrl":"10.1109/JEDS.2024.3373889","url":null,"abstract":"In this paper, we conducted a simulation of an indium-gallium-zinc oxide (IGZO)-based neuromorphic system and proposed layer-by-layer membrane capacitor (Cmem) optimization for integrate-and-fire (I&F) neuron circuits to minimize the accuracy drop in spiking neural network (SNN). The fabricated synaptic transistor exhibited linear 32 synaptic weights with a large dynamic range \u0000<inline-formula> <tex-math>$(sim 846$ </tex-math></inline-formula>\u0000), and an n-type-only IGZO I&F neuron circuit was proposed and verified by HSPICE simulation. The network, consisting of three fully connected layers, was evaluated with an offline learning method employing synaptic transistor and I&F circuit models for three datasets: MNIST, Fashion-MNIST, and CIFAR-10. For offline learning, accuracy drop can occur due to information loss caused by overflow or underflow in neurons, which is largely affected by Cmem. To address this problem, we introduced a layer-by-layer \u0000<inline-formula> <tex-math>${mathrm{ C}}_{mathrm{ mem}}$ </tex-math></inline-formula>\u0000 optimization method that adjusts appropriate \u0000<inline-formula> <tex-math>${mathrm{ C}}_{mathrm{ mem}}$ </tex-math></inline-formula>\u0000 for each layer to minimize the information loss. As a result, high SNN accuracy was achieved for MNIST, Fashion-MNIST, and CIFAR-10 at 98.42%, 89.16%, and 48.06%, respectively. Furthermore, the optimized system showed minimal accuracy degradation under device-to-device variation.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10461007","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140055338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches 碳化硅和氮化镓外垂直光电导开关的特性比较

IF 2.3 3区工程技术

IEEE Journal of the Electron Devices Society Pub Date : 2024-03-05 DOI: 10.1109/JEDS.2024.3372596

Linglong Zeng;Langning Wang;Xinyue Niu;Fuyin Liu;Ting He;Yanran Gu;Muyu Yi;Jinmei Yao;Tao Xun;Hanwu Yang

{"title":"Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches","authors":"Linglong Zeng;Langning Wang;Xinyue Niu;Fuyin Liu;Ting He;Yanran Gu;Muyu Yi;Jinmei Yao;Tao Xun;Hanwu Yang","doi":"10.1109/JEDS.2024.3372596","DOIUrl":"10.1109/JEDS.2024.3372596","url":null,"abstract":"Vertical extrinsic photoconductive semiconductor switches (PCSSs) are presented with initial characteristics comparison between V-doped 4H-SiC and Fe-doped GaN PCSS under axial triggering such as dark resistance, photoconductivity, power output, and breakdown behavior. Experiments are carried out under the 532-nm-wavelength laser with mJ-level energy and a pulse width of 30 ns. Photoconductive experiments show that the photoelectric conversion efficiency of GaN PCSS is 2.27 times higher than 4H-SiC PCSS with the same electric field strength under different laser energies from 1 mJ to 5 mJ. 4H-SiC PCSS with a dark-state resistance of \u0000<inline-formula> <tex-math>$10^{12} Omega cdot $ </tex-math></inline-formula>\u0000 cm can withstand a bias voltage of 8 kV (16 kV/mm) and laser energy of 8 mJ and the maximum output power is up to 428.7 kW, while that of GaN can only stand a bias voltage of 1 kV (2.9 kV/mm) because of low dark resistance and defect. Obvious cracks of 4H-SiC PCSS can be observed from the breakdown image after breakdown occurs, while the dark-state resistance of GaN PCSS drops from \u0000<inline-formula> <tex-math>$10^{6} Omega cdot $ </tex-math></inline-formula>\u0000 cm to \u0000<inline-formula> <tex-math>$10^{4} Omega cdot $ </tex-math></inline-formula>\u0000 cm under high DC voltage.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10458869","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140046184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0