IEEE Journal of the Electron Devices Society最新文献

{"title":"High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics","authors":"Sunaina Priyadarshi;Abidur Rahaman;Mohammad Masum Billah;Sabiqun Nahar;Md. Redowan Mahmud Arnob;Jin Jang","doi":"10.1109/JEDS.2024.3438210","DOIUrl":"https://doi.org/10.1109/JEDS.2024.3438210","url":null,"abstract":"This article intends to use a low-temperature poly-Si oxide (LTPO) level-down-shifter (LDS) to translate voltage signals with different amplitudes operating at various frequencies. The LTPO LDS is made of p-type low-temperature poly-Si and n-type a-InGaZnO thin-film transistors. The input voltage range of 2 V~10 V could be shifted to 1.2 V ~ 4.41 V output voltage. The rising and falling times are less than 400 ns at the operational frequency of 50 kHz. Also, the multiple output power supply of 6 V, 3 V, and 1.8 V for interface circuits has been possible with a single supply of 10 V. The proposed LDS shows a switching power consumption of 95.57 pW and area of 0.023 mm2.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"587-593"},"PeriodicalIF":2.0,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10637919","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142013206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrical Effect of Nitrogen Implanted Into LDD of MOSFETs","authors":"Yoo Seon Song;Markus Lenski;Mohammed F. Karim;Keith Flynn;Jan Hoentschel;Carsten Peters;Jens-Uwe Sachse;Ömür Işıl Aydin;Jun Wu;Bastian Haußdörfer;Mahesh Siddabathula;Konrad Semmler;Jürgen Daleiden","doi":"10.1109/JEDS.2024.3442474","DOIUrl":"https://doi.org/10.1109/JEDS.2024.3442474","url":null,"abstract":"The motivation of this study was to solve the high \u0000<inline-formula> <tex-math>$rm I_{D,off}$ </tex-math></inline-formula>\u0000 problem in 8 Volt N-channel MOSFET. We experimented with implanting nitrogen into LDD at various doses. As a result, \u0000<inline-formula> <tex-math>$rm I_{D,off}$ </tex-math></inline-formula>\u0000 increases and \u0000<inline-formula> <tex-math>$rm BV_{DSS}$ </tex-math></inline-formula>\u0000 decreases as the dose increases. When it exceeds 1.0E15 cm\u0000<inline-formula> <tex-math>$^{-2}$ </tex-math></inline-formula>\u0000, the occurrence of tail-type \u0000<inline-formula> <tex-math>$rm I_{D,off}$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>$rm BV_{DSS}$ </tex-math></inline-formula>\u0000 that deviate from the normal distribution increases. Implanted nitrogen enhances the diffusion of dopants in the LDD bulk but suppresses it on the silicon surface. As a result, the depletion curvature at the LDD edge becomes a negative shape and increases the electric field. We performed the same experiment on logic MOSFETs to comprehensively analyze other electrical effects. Nitrogen improves the HCI immunity of MOSFETs but degrades for 2.5 Volt and 8 Volt MOSFETs when the dose is above 1.0E15 cm\u0000<inline-formula> <tex-math>$^{-2}$ </tex-math></inline-formula>\u0000. The short-channel effect of 2.5 Volt MOSFET is insensitive to nitrogen but is suppressed in CORE MOSFET when the dose is over 1.3E15 cm\u0000<inline-formula> <tex-math>$^{-2}$ </tex-math></inline-formula>\u0000. Nitrogen changes \u0000<inline-formula> <tex-math>$rm I_{D,sat}$ </tex-math></inline-formula>\u0000 through interactions with co-implanted species and nitrogen dose. As a result, nitrogen co-implanted with phosphorus shows a parabolic-like \u0000<inline-formula> <tex-math>$rm I_{D,sat}$ </tex-math></inline-formula>\u0000 trend. However, in the case of CORE MOSFET implanted with arsenic, \u0000<inline-formula> <tex-math>$rm I_{D,sat}$ </tex-math></inline-formula>\u0000 does not show a parabolic-like trend but increases continuously. This experiment did not find much benefit from nitrogen implantation for 2.5 Volt and 8 Volt MOSFETs. For all MOSFETs, it is recommended that the nitrogen dosage not exceed 1.0E15 cm\u0000<inline-formula> <tex-math>$^{-2}$ </tex-math></inline-formula>\u0000.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"627-636"},"PeriodicalIF":2.0,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10634165","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142090780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance Germanium P-I-N Photodiodes for High-Speed, Hard X-Ray Imaging","authors":"Ziang Guo;Sergei Mistyuk;Arthur Carpenter;Charles E. Hunt","doi":"10.1109/JEDS.2024.3441389","DOIUrl":"10.1109/JEDS.2024.3441389","url":null,"abstract":"Design, fabrication, and measurement of vertical Germanium (Ge) Photodiodes for highspeed, hard X-Ray imaging is presented. The devices used atmospheric-pressure epitaxial absorption layers, varying absorption layer thicknesses (10 – 245 \u0000<inline-formula> <tex-math>$mu$ </tex-math></inline-formula>\u0000m) over bulk-Ge substrates, fabricated in various sizes. Measurements include large-signal and transient-response from X-ray source between 6 keV and 28 keV. The results approach a 100% external quantum efficiency with 245 \u0000<inline-formula> <tex-math>$mu$ </tex-math></inline-formula>\u0000m absorption regions and a 22% improvement in temporal response with 10 \u0000<inline-formula> <tex-math>$mu$ </tex-math></inline-formula>\u0000m absorption region compared to an Si reference device of the same active area.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"1051-1056"},"PeriodicalIF":2.0,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10632103","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141969057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A 1.1-nJ/Classification True Analog Current Computing on Multilayer Neural Network With Crystalline-IGZO/Si-CMOS Monolithic Stack Technology","authors":"Kazuki Tsuda;Kazuma Furutani;Yuto Yakubo;Hiromichi Godo;Yoshinori Ando;Atsutake Kosuge;Toru Nakura;Shunpei Yamazaki","doi":"10.1109/JEDS.2024.3439712","DOIUrl":"10.1109/JEDS.2024.3439712","url":null,"abstract":"We prototyped a true analog current computing multilayer neural network (NN) chip, where multiple analog in-memory computing (AiMC) circuit blocks are connected to each other via simple analog non-linear operation circuits. The true analog current computing is achieved with the invention of an analog current rectified linear unit (ReLU) circuit of a three-stage current mirror. With the prototyped NN chip, we demonstrated that the true analog computing (1) achieves process variation compensation utilizing current driving, (2) eliminates digital-analog or analog-digital data conversion between NNs, and (3) realizes low power inference, not only in multiply-accumulate (MAC) but in ReLU operation. Through classification of Mixed National Institute of Standards and Technology dataset, the chip exhibits a low energy of 1.1 nJ/classification and an accuracy of 91.6%, achieves weight retention of five hours, much longer than dynamic random access memory, and enables 68% power reduction compared with serially connected two single-layer NN chips with analog-digital converters and digital-analog converters in between. Although periodic refresh from an external storage class memory is necessary for applications that require continuous operation exceeding five hours, our AiMC capable of MAC and non-linear operations with low power is effective in applications such as edge artificial intelligence terminals with limited power sources.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"594-604"},"PeriodicalIF":2.0,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10628044","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fast-Read Storage Performance by Thyristor Operation in 3-D Flash Memory","authors":"Tomoya Sanuki;Hideto Horii;Takashi Maeda","doi":"10.1109/JEDS.2024.3438886","DOIUrl":"10.1109/JEDS.2024.3438886","url":null,"abstract":"In this work, we report the fast-read storage performance of thyristor operation in 3D flash memory. By forming a pseudo N+/P/N/P+ structure with the word line (WL) bias of 3D string cells, thyristor operation with steep switching characteristics and a high on-current can be obtained. It is known that there is a strong cell-to-cell interference effect in thyristor operation, and in previous report (Horii et al., 2020), we have suggested novel WL bias conditions, referred to as the wide barrier mode, that can suppress the cell-to-cell interference effect. In order to evaluate the advantages of thyristor operation in 3D flash memory further, we report for the first time the several cell characteristics and reliability issues of thyristor operation required for the actual usage of storage products. (1) We demonstrate excellent cell characteristics of a wide programmed Vth window and sufficient program slope values in thyristor operation, which are indispensable for realizing multi-level cells. (2) Cell characteristics of thyristor operation exhibit hysteresis when sweeping in the WL direction but not in the bit line (BL) direction, which is essential for determining the read operating waveform. (3) Our proposed new WL biasing scheme to suppress the cell-to-cell interference effect is described with a more detailed dependence on adjacent cells and its effect on the on-current. We show that a high on-current can still be achieved even with highly stacked WL of approximately 100 layers. (4) In terms of reliability issues, thyristor operation exhibits a sufficient margin against read cycle stress with minimal change in the cell Vth even after 2 million read cycles. Thyristor operation can be applied to storage products even in read-intensive applications. (5) We also describe storage performance, including read latency and bandwidth, for SLC and QLC mode in memory arrays with highly stacked WL of approximately 100 layers. Thyristor operation of 3D flash memory is a strong candidate for future high-speed storage products, as it can significantly improve read latency and program throughput.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"710-716"},"PeriodicalIF":2.0,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10624679","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs","authors":"Myeongsu Chae;Ho-Young Cha;Hyungtak Kim","doi":"10.1109/JEDS.2024.3436820","DOIUrl":"10.1109/JEDS.2024.3436820","url":null,"abstract":"In this work, we investigated the instability of threshold voltage (Vth) in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) under positive gate biases and high temperatures. We reveal an abnormal temperature dependence of threshold voltage instability, suggesting that threshold voltage instability significant differences at elevated temperatures and is primarily attributed to the trapping/detrapping of charged carriers. Notably, the positive shift in threshold voltage diminished and eventually reversed at low gate bias as the temperature increased. In contrast, the negative shift intensified with increasing temperature but began to mitigate above 100°C at high gate bias due to an enhanced de-trapping process of electrons and holes. These results suggest the presence of multiple mechanisms behind the threshold voltage instability under varying thermal conditions.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"581-586"},"PeriodicalIF":2.0,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10620298","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141882126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Explicit Function Model of Electromagnetic Reliability for CMOS Inverters Under HPM Coupling Based on Physical Mechanism Analysis and Neural Network Algorithm","authors":"Huikai Chen, Jinbin Pan, Shulong Wang, Liutao Li, Jin Huang, Shupeng Chen, Hongxia Liu","doi":"10.1109/jeds.2024.3436063","DOIUrl":"https://doi.org/10.1109/jeds.2024.3436063","url":null,"abstract":"","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"292 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141867522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Demonstration of SA TG Coplanar IGZO TFTs With Large Subthreshold Swing Using the Back-Gate Biasing Technique for AMOLED Applications","authors":"Chae-Eun Oh;Ye-Lim Han;Dong-Ho Lee;Jin-Ha Hwang;Hwan-Seok Jeong;Myeong-Ho Kim;Kyoung-Seok Son;Sunhee Lee;Sang-Hun Song;Hyuck-In Kwon","doi":"10.1109/JEDS.2024.3434613","DOIUrl":"10.1109/JEDS.2024.3434613","url":null,"abstract":"We demonstrate that the shorter channel self-aligned top-gate (SA TG) coplanar indiumgallium- zinc oxide (IGZO) thin-film transistors (TFTs), with negative voltage applied to the back-gate, exhibit superior characteristics as driving transistors in organic light-emitting diode (OLED) pixels compared to their longer channel counterparts. The shorter channel IGZO TFTs (with a channel length (L) of 3 μm) biased with a back gate voltage of −3.5 V showed a larger subthreshold swing (SS = 0.21 V/dec) than the longer channel ones (with L = 5 μm, SS = 0.16 V/dec) with a similar threshold value (VTH = 0.7–0.8 V). A large SS is beneficial for controlling grayscale levels, especially at low gray levels, when IGZO TFTs are used as driving transistors in OLED pixels. Furthermore, the negatively back-gate-biased shorter channel SA TG coplanar IGZO TFTs exhibited significantly enhanced electrical stability compared to the longer channel ones under both positive gate bias and hot carrier stresses. The findings of this study are expected to be useful in expanding the utility of IGZO TFTs in OLED displays.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"564-568"},"PeriodicalIF":2.0,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10612771","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141867462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors","authors":"Chinsung Park;Prasanna Venkat Ravindran;Dipjyoti Das;Priyankka Gundlapudi Ravikumar;Chengyang Zhang;Nashrah Afroze;Lance Fernandes;Yu Hsin Kuo;Jae Hur;Hang Chen;Mengkun Tian;Winston Chern;Shimeng Yu;Asif Islam Khan","doi":"10.1109/JEDS.2024.3434598","DOIUrl":"10.1109/JEDS.2024.3434598","url":null,"abstract":"The use of the plasma-enhanced atomic layer deposition (ALD) technique for the deposition of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up free operation. However, these studies have primarily focused on metal-ferroelectric-metal (MFM) structures. In this work, we investigate the characteristics of ferroelectric field-effect transistors (FEFETs) in which the ferroelectric Hf0.5Zr0.5O2 (HZO) gate stack is deposited using the plasma-enhanced atomic layer deposition (PEALD) technique. We observe that PEALD FEFET requires a higher write voltage for the same memory window compared to an equivalent FEFET with thermal ALD (THALD)-grown HZO. The increase in write voltage in PEALD FEFET occurs primarily due to the increase of the interfacial oxide layer using the plasma process. In addition, we observe that the SiO2 interfacial layer underneath the ferroelectric (FE) HZO layer eliminates the wake-up behavior in both THALD and PEALD FEFETs.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"569-572"},"PeriodicalIF":2.0,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10612817","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141867524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A High-Performance and Low HCI Degradation LDMOS Device With a Hybrid Field Plate","authors":"Shaoxin Yu;Rongsheng Chen;Weiheng Shao;Weiming Yu;Xiaoyan Zhao;Zheng Chen;Weizhong Shan;Jenhao Cheng","doi":"10.1109/JEDS.2024.3433442","DOIUrl":"10.1109/JEDS.2024.3433442","url":null,"abstract":"In this paper, a high-performance and low-HCI (Hot carrier injection) degradation LDMOS (Lateral double diffused metal oxide semiconductor) device is introduced. It consists of an additional mini LOCOS (Local oxidation of silicon) field plate combined with a mini STI (Shallow trench isolation) field plate without an additional complex fabrication process. A series of devices have been fabricated, and the field plate corner profile is optimized. The proposed hybrid FP(Field plate) can effectively reduce the electric field peak, and the BV (Breakdown voltage) achieves as high as 78.9V while the \u0000<inline-formula> <tex-math>${R}_{{on}{,}{sp}}$ </tex-math></inline-formula>\u0000 (Specific on-resistance) is as low as \u0000<inline-formula> <tex-math>$69.1~{{mathrm { m}}Omega cdot }{mm}^{2}$ </tex-math></inline-formula>\u0000, which is 65.8% improved compared with conventional transistors. Meanwhile, the hybrid FP device owns much better HCI (Hot carrier injection) degradation performance on \u0000<inline-formula> <tex-math>${R}_{on,sp}$ </tex-math></inline-formula>\u0000, threshold voltage \u0000<inline-formula> <tex-math>${V}_{T}$ </tex-math></inline-formula>\u0000, and gate-drain capacitance \u0000<inline-formula> <tex-math>${C}_{GD}$ </tex-math></inline-formula>\u0000. The degradation of \u0000<inline-formula> <tex-math>${R}_{{on}{,}{sp}}$ </tex-math></inline-formula>\u0000 is only 8.6% under \u0000<inline-formula> <tex-math>${I}_{d}$ </tex-math></inline-formula>\u0000 mode stress while it is as high as 15.8% for the conventional devices. At on-state, \u0000<inline-formula> <tex-math>${C}_{GD}$ </tex-math></inline-formula>\u0000 degradation is only 9.1% while it is nearly 59.9% in the traditional device. At high voltage application regions, the device exhibits nearly 0% \u0000<inline-formula> <tex-math>${C}_{GD}$ </tex-math></inline-formula>\u0000 degradation while it is as high as 43.8% in the traditional device. The results indicate the device’s robustness in both DC (Direct current) applications and RF (Radio frequency) applications.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"605-612"},"PeriodicalIF":2.0,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10609835","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141780663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}