Design and Optimization of Bilayer InGaSnO and Nitrogen-Doped InSnO Thin-Film Transistors for Enhanced Mobility and Reliability

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-03-18 DOI:10.1109/JEDS.2025.3552454

Weijie Jiang;Li Lu;Chenfei Li;Wenyang Zhang;Wenzhao Wang;Guoli Li;Jingli Wang;Xingqiang Liu;Ablat Abliz;Da Wan

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Abstract

In this study, high-performance indium gallium tin oxide (IGTO) and nitrogen (N) doped indium tin oxide (ITO) hetero structured bilayer thin-film transistors (TFTs) are prepared by incorporating an N-doped ITO intercalation layer in single-layer IGTO TFTs. The performance of the IGTO/ITO:N bilayer TFTs is significantly improved compared with single-layer IGTO TFTs, with specific indicators including a field-effect mobility of 32.6 cm2/V

$\cdot $

s, a subthreshold swing of 201 mV/dec, a threshold voltage shifts of 0.21 V and −0.45 V under ±10 V gate-bias stress. The results show that the performance enhancement is due to the rational design of the bilayer structure, in which the ITO layer functions as a charge-accumulation layer, providing additional electrons. Meanwhile, N doping effectively reduces the oxygen vacancies, thereby decreasing the interfacial trap density, and ultimately enhancing the performance of single-layer IGTO TFTs. Through X-ray photoelectron spectroscopy and low-frequency noise analyses, we further confirmed the positive effects of N doping and bilayer structure on reducing the defective states and enhancing the stability of TFTs. Overall, the strategy presented here is effective for preparing high performance oxide TFTs for potential applications in future optoelectronic displays.

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双层InGaSnO和氮掺杂InSnO薄膜晶体管的设计与优化，以提高迁移率和可靠性

在本研究中，通过在单层IGTO薄膜晶体管中加入N掺杂ITO嵌入层，制备了高性能的铟镓锡氧化物（IGTO）和氮掺杂铟锡氧化物（ITO）异质结构双层薄膜晶体管（TFTs）。与单层IGTO TFTs相比，IGTO/ITO:N双层TFTs的性能得到了显著提高，具体指标包括场效应迁移率为32.6 cm2/V $\cdot $ s，亚阈值摆幅为201 mV/dec，在±10 V栅极偏置应力下阈值电压位移为0.21 V和- 0.45 V。结果表明，性能的提高是由于双层结构的合理设计，其中ITO层作为电荷积累层，提供额外的电子。同时，N掺杂有效地减少了氧空位，从而降低了界面陷阱密度，最终提高了单层IGTO tft的性能。通过x射线光电子能谱和低频噪声分析，我们进一步证实了N掺杂和双层结构对减少缺陷态和提高tft稳定性的积极作用。总的来说，本文提出的策略对于制备高性能氧化物tft在未来光电显示中的潜在应用是有效的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.