Impact of the Schottky Barrier Height on the Carrier Velocity Overshoot Behaviors in SOI nMOSFETs With Metal Source/Drain

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-03-15 DOI:10.1109/JEDS.2025.3569242

Rui Su;Yan Jing;Xinyi Zhang;Yi Jiang;Dawei Gao;Walter Schwarzenbach;Bich-Yen Nguyen;Junkang Li;John Robertson;Rui Zhang

引用次数: 0

Abstract

The ballistic transport behaviors of SOI nMOSFETs with NiSi metal source/drain (S/D) have been investigated. It is found that the suppression of Schottky barrier height for holes results in an improvement of carrier injection velocity (vinj), attributable to the increased electrical field at the source edge. As a result, the electron injection velocity (vinj) of

$1.77\times 10{^{{7}}}$

cm/s has been realized at the lateral electrical field of 1 MV/cm for the SOI nMOSFETs with a S/D Schottky barrier height of 0.71 eV. These results suggest that the metal S/D structure is feasible to boost the performance of ultimately scaled SOI devices.

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肖特基势垒高度对金属源漏型SOI nmosfet载流子速度超调行为的影响

研究了具有NiSi金属源/漏极（S/D）的SOI nmosfet的弹道输运行为。研究发现，抑制空穴的肖特基势垒高度导致载流子注入速度（vinj）的提高，这是由于源边缘电场的增加。结果表明，对于s /D肖特基势垒高度为0.71 eV的SOI nmosfet，在1 MV/cm的横向电场下，电子注入速度（vinj）为1.77\ × 10{^{{7}}}$ cm/s。这些结果表明，金属S/D结构对于提高最终规模化SOI器件的性能是可行的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.