Field-Effect Passivation of GaN-Based Blue Micro-Light-Emitting Diodes

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-03-18 DOI:10.1109/JEDS.2025.3552171

Woo Jin Baek;Joon Pyo Kim;Song Hyeon Kuk;Juhyuk Park;Hyun Soo Kim;Dae-Myeong Geum;Sang Hyeon Kim

引用次数: 0

Abstract

We demonstrate field-effect passivation (FEP) of GaN-based blue

$\mu $

LEDs by incorporating an additional metal-oxide-semiconductor gate structure on the sidewalls. This approach allows for active control of surface band bending at the sidewalls, thereby modulating carrier trapping and de-trapping. We observe that applying a negative gate voltage

$(V_{G})$

facilitates electron de-trapping, leading to a reduction in surface recombination and a corresponding decrease in current, as evidenced by an enhanced external quantum efficiency (EQE). Conversely, applying a positive

$V_{G}$

results in the opposite effect.

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gan基蓝色微发光二极管的场效应钝化

我们通过在侧壁上加入额外的金属氧化物半导体栅极结构来演示gan基蓝色led的场效应钝化（FEP）。这种方法允许主动控制侧壁的表面带弯曲，从而调制载流子捕获和释放。我们观察到，施加负栅极电压$(V_{G})$有助于电子脱陷，导致表面复合减少和相应的电流减少，正如增强的外量子效率（EQE）所证明的那样。相反，应用正的$V_{G}$会产生相反的效果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.