Enhancement of Near-Infrared Sensitivity in Silicon-Based Image Sensors to Oblique Chief Rays via Quasi-Surface Plasmon Resonance

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-03-10 DOI:10.1109/JEDS.2025.3549721

Koya Okazaki;Takahito Yoshinaga;Nobukazu Teranishi;Atsushi Ono

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Abstract

A silicon-based image sensor is proposed, incorporating plasmonic diffraction gratings tailored to chief ray angles (CRAs), to enhance near-infrared (NIR) sensitivity improvement over a broad range of incident angles. Under quasi-surface plasmon resonance (quasi-SPR) conditions, the metal grating efficiently diffracted incident light into the silicon absorption layer. The period and width of the metal grating were adjusted at each pixel position according to CRAs, thereby improving the NIR sensitivity at sensor edges. The plasmonically diffracted light with angled chief ray was confined within the pixel photodiode. The photon confinement resulted in a significant improvement in absorption of approximately 37% or more, within an incident angle range of 30 degrees at a NIR wavelength of 940 nm and a silicon thickness of 3 μm. The improvement in NIR absorption over a broad incident angle range enhances the sensitivity of the entire sensor chip, representing a significant advancement for NIR cameras.

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准表面等离子体共振增强硅基图像传感器对斜主射线的近红外灵敏度

提出了一种基于硅的图像传感器，结合了适合主射线角（CRAs）的等离子体衍射光栅，以提高近红外（NIR）在大入射角范围内的灵敏度。在准表面等离子体共振（准spr）条件下，金属光栅有效地将入射光衍射到硅吸收层中。在每个像元位置根据CRAs调整金属光栅的周期和宽度，从而提高传感器边缘的近红外灵敏度。带角度主射线的等离子体衍射光被限制在像素级光电二极管内。当入射角度为30度时，在940 nm的近红外波长和3 μm的硅厚度下，光子约束导致了大约37%或更多的吸收改善。在宽入射角范围内，近红外吸收的改善提高了整个传感器芯片的灵敏度，代表了近红外相机的重大进步。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.