SangWoon Lee;JungSuk Oh;HyeongMin Kim;YiKyoung You;Nack-Hyeon Keum;HeeJu Moon;SangHun Kim;KeeChan Park;Hwarim Im
{"title":"A Low-Power LTPO Scan Driver Circuit Using DC Power Supplied Buffer","authors":"SangWoon Lee;JungSuk Oh;HyeongMin Kim;YiKyoung You;Nack-Hyeon Keum;HeeJu Moon;SangHun Kim;KeeChan Park;Hwarim Im","doi":"10.1109/JEDS.2025.3571171","DOIUrl":null,"url":null,"abstract":"This paper proposes a novel low-temperature polycrystalline silicon and oxide (LTPO) scan driver circuit integrating p-channel low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) and n-channel metal-oxide (MOx) TFTs. The proposed circuit employs a complementary metal-oxide-semiconductor inverter as an output buffer, allowing low-level voltage to be delivered from a DC power supply to the output node without relying on clock-supplied bootstrapping, which is typically required in most scan driver circuits to drive the output buffer. This design significantly lowers dynamic power consumption by up to 74% by reducing the power consumption due to charging/discharging the parasitic capacitance of the buffer TFT by the clock signals compared with the conventional LTPO scan driver circuits utilizing the clock-supplied bootstrapping method. Additionally, the proposed circuit reduces the positive bias applied to MOx TFTs to alleviate stress conditions effectively. Therefore, the proposed circuit can improve long-term reliability by mitigating the threshold voltage shifts of MOx TFTs.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"13 ","pages":"494-500"},"PeriodicalIF":2.4000,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11006837","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11006837/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This paper proposes a novel low-temperature polycrystalline silicon and oxide (LTPO) scan driver circuit integrating p-channel low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) and n-channel metal-oxide (MOx) TFTs. The proposed circuit employs a complementary metal-oxide-semiconductor inverter as an output buffer, allowing low-level voltage to be delivered from a DC power supply to the output node without relying on clock-supplied bootstrapping, which is typically required in most scan driver circuits to drive the output buffer. This design significantly lowers dynamic power consumption by up to 74% by reducing the power consumption due to charging/discharging the parasitic capacitance of the buffer TFT by the clock signals compared with the conventional LTPO scan driver circuits utilizing the clock-supplied bootstrapping method. Additionally, the proposed circuit reduces the positive bias applied to MOx TFTs to alleviate stress conditions effectively. Therefore, the proposed circuit can improve long-term reliability by mitigating the threshold voltage shifts of MOx TFTs.
期刊介绍:
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.