Compact Modeling of 3D NAND Flash Memory With Ferroelectric Characteristics: A Comparative Analysis of O/N/O and O/N/F Structures

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-03-05 DOI:10.1109/JEDS.2025.3567077

Sunghyun Woo;Jihwan Lee;Gyunseok Ryu;Myounggon Kang

引用次数: 0

Abstract

This study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations. The model, implemented in Verilog-A, captures the saturation polarization-electric field (P-E) hysteresis behavior of a ferroelectric capacitor. To validate the model, simulation results are compared between TCAD and SPICE. Under identical programming conditions, the proposed oxide/nitride/ferroelectric (O/N/F) structure demonstrates approximately 3 V higher channel potential than the conventional oxide/nitride/oxide (O/N/O) structure, resulting in improved programming accuracy and cell stability. In addition, SPICE simulations run over an hour faster than TCAD, making the model efficient for circuit-level analysis.

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具有铁电特性的三维NAND闪存的紧凑建模：O/N/O和O/N/F结构的比较分析

本研究提出了一种紧凑的三维（3D） NAND闪存模型，该模型结合了铁电特性，可以实现精确的电路级模拟。该模型在Verilog-A中实现，捕获了铁电电容器的饱和极化电场（P-E）迟滞行为。为了验证模型的有效性，将仿真结果与TCAD和SPICE进行了比较。在相同的编程条件下，所提出的氧化物/氮化物/铁电（O/N/F）结构比传统的氧化物/氮化物/氧化物（O/N/O）结构显示出大约3 V的通道电位，从而提高了编程精度和电池稳定性。此外，SPICE仿真运行速度比TCAD快一个多小时，使该模型更有效地用于电路级分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.