Thermal Stability of Gate Driver Circuits Based on 4H-SiC MOSFETs at 300°C for High-Power Applications

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-03-03 DOI:10.1109/JEDS.2025.3546959

Vuong Van Cuong;Tatsuya Meguro;Seiji Ishikawa;Tomonori Maeda;Hiroshi Sezaki;Shin-Ichiro Kuroki

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引用次数: 0

Abstract

The operation and reliability of gate driver circuits based on 4H-SiC MOSFETs at temperatures up to 300°C were reported. Due to the advantages of 4H-SiC MOSFETs, the driver circuit can overcome limitations in complicated circuit design and power dissipation associated with SiC BJTbased technology. Additionally, the stability of implanted 4H-SiC resistors can address the reliability issues of SiC CMOS-based driver circuits, which are caused by the instability in the threshold voltage of P-channel SiC MOSFETs. In this study, the switching characteristics of the gate driver circuit were improved when the ambient temperature increased. The decrease of threshold voltage and increase of carrier mobility of the 4H-SiC MOSFETs may account for the improvement in switching characteristics of the gate driver circuit. The output signal of the gate driver circuit still showed proper characteristics after 600 min of continuous operation at 300°C in an air ambient. These results indicate that the gate driver circuit based on 4H-SiC MOSFET technology is promising to apply for high power applications.

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基于4H-SiC mosfet的栅极驱动电路在300°C下的热稳定性

报道了基于4H-SiC mosfet的栅极驱动电路在高达300°C温度下的工作和可靠性。由于4H-SiC mosfet的优点，驱动电路可以克服基于SiC bjt技术的复杂电路设计和功耗限制。此外，植入4H-SiC电阻的稳定性可以解决由p沟道SiC mosfet阈值电压不稳定引起的SiC cmos驱动电路可靠性问题。在本研究中，栅极驱动电路的开关特性随着环境温度的升高而得到改善。阈值电压的降低和载流子迁移率的提高可能是栅极驱动电路开关特性改善的原因。在300℃的空气环境中连续工作600分钟后，栅极驱动电路的输出信号仍然显示出正常的特性。这些结果表明，基于4H-SiC MOSFET技术的栅极驱动电路有望应用于高功率应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.