A Highly Robust Integrated Gate Driver Based on Organic TFTs for Active-Matrix Displays

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-02-18 DOI:10.1109/JEDS.2025.3542951

Wanming Wu;Chuanke Chen;Chunyu Zhang;Chen Gu;Yinzhi Tang;Shipeng Wang;Mengwen Yan;Qingding Tong;Di Geng;Ling Li

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引用次数: 0

Abstract

A highly robust integrated gate driver based on organic thin-film transistors (OTFTs) is proposed that effectively addresses the output degradation caused by depletion-mode operation, instability and variation. The series-connected two-transistor structures and the inverters generate positive gateto- source voltages for internal nodes, which eliminate the leakage current and voltage ripples in depletion-mode operation and extend the support threshold voltage (

$V_{TH}$

) range. The simulation waveforms of the 538th stage have no degradation, considering the

$\Delta V_{TH}$

range from 1.18 to -0.53 V for single-gate (SG) OTFT and that from 2.13 to -8.07 V for dual-gate (DG) OTFT. The fabricated gate drivers generate stable scan signals with almost negligible voltage ripples for SG- and DG-OTFT with

$V_{TH}$

of +7.9 and +1.8 V, respectively. In a 5.8-inch AMOLED panel (resolution: 538×302), the circuit can operate at a frame rate range from 1 to 45 Hz, driven by clocks with a frequency of 12.5 kHz and a swing from 0 to -15 V.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.