Characterization and Modeling of MOSFET Series Resistance Down to 4 K

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-02-21 DOI:10.1109/JEDS.2025.3544738

Yuhuan Lin;Zhizhao Ma;Shilong Li;Tianyue Wen;Yuxuan Zhou;Hao Su;Shenghua Zhou;Longyang Lin;Yida Li;Kai Chen

引用次数: 0

Abstract

MOSFET parasitic series resistance

$({R}_{SD})$

is an important parameter when channel length scales down. This paper presents a systematic study of

${R}_{SD}$

extracted from the mobility constant method down to 4 K. For the first time, the anomalous behavior of

${R}_{SD}$

with temperature lowering is interpreted and modeled by combined effects of dopant freeze-out and mobility. Excellent fit between the standard N/P-MOSFET measurement data and this model for 40 nm bulk device from leading foundry is shown from 300 K to 4 K. In addition,

${R}_{SD}$

change with width scaling combined with temperature effects is also discussed.

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低至4k的MOSFET串联电阻的表征与建模

MOSFET寄生串联电阻$({R}_{SD})$是沟道长度减小时的重要参数。本文对迁移率常数法提取的${R}_{SD}$进行了系统的研究。首次用掺杂剂冻出和迁移率的联合效应解释了${R}_{SD}$随温度降低的反常行为并建立了模型。从300 K到4 K，标准N/P-MOSFET测量数据与该模型之间具有良好的拟合性。此外，还讨论了${R}_{SD}$随宽度缩放和温度效应的变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.