IEEE Transactions on Circuits and Systems II: Express Briefs最新文献

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IEEE Transactions on Circuits and Systems--II: Express Briefs Publication Information IEEE电路与系统汇刊——II:快报简报出版信息
IF 4 2区 工程技术
IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2025-07-01 DOI: 10.1109/TCSII.2025.3580983
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引用次数: 0
IEEE Circuits and Systems Society Information IEEE电路与系统学会信息
IF 4 2区 工程技术
IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2025-07-01 DOI: 10.1109/TCSII.2025.3580985
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引用次数: 0
Parallel and Pipelined BRAM-Based Matrix Transposition for 6G 基于并行和流水线bram的6G矩阵转置
IF 4.9 2区 工程技术
IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2025-06-30 DOI: 10.1109/TCSII.2025.3584052
Jierui Chen;Chuang Yang;Xu Zhou;Mugen Peng
{"title":"Parallel and Pipelined BRAM-Based Matrix Transposition for 6G","authors":"Jierui Chen;Chuang Yang;Xu Zhou;Mugen Peng","doi":"10.1109/TCSII.2025.3584052","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3584052","url":null,"abstract":"In this brief, we present a parallel and pipelined algorithm for BRAM-based matrix transposition, along with its corresponding architecture, optimized specifically to meet the stringent throughput and latency demands of 6G. The architecture utilizes a novel address mapping algorithm, which exploits the coprimality between memory parameters to achieve conflict-free parallel access via a simple yet efficient prime-modulo addressing scheme.The architecture achieves conflict-free parallel memory access on BRAM, significantly improving parallelism and enhancing throughput. More importantly, by adopting a ping-pong buffering scheme, it enables fully pipelined and highly parallel matrix transposition, primarily targeting low-latency and high-throughput tasks in 6G. Experimental results show that, compared with existing implementations supporting similar matrix sizes, the architecture in this brief increases throughput significantly from 0.8 GB/s to 25.6 GB/s under a latency of 0.08ms.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 8","pages":"1033-1037"},"PeriodicalIF":4.9,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144750933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bumpless Transfer Control for Discrete Semi-Markov Switching Power System With Cyber Attack 网络攻击下离散半马尔可夫开关电源系统的无颠簸传输控制
IF 4.9 2区 工程技术
IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2025-06-24 DOI: 10.1109/TCSII.2025.3582648
Zhenhao Li;Wenhai Qi;Ju H. Park;Zheng-Guang Wu
{"title":"Bumpless Transfer Control for Discrete Semi-Markov Switching Power System With Cyber Attack","authors":"Zhenhao Li;Wenhai Qi;Ju H. Park;Zheng-Guang Wu","doi":"10.1109/TCSII.2025.3582648","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3582648","url":null,"abstract":"In this brief, the bumpless transfer control is studied for power system under cyber attack with stochastic switching rule. Transient failures of power lines and dynamic switching of circuit breakers are accurately modeled by introducing semi-Markov chain. Due to the randomness of denial-of-service attack, a Markov chain is introduced to characterize the attack behavior. In order to solve the issue of stochastic switching in system operation and the impact caused by cyber attack, a comprehensive bumpless transfer rule is proposed, which is applicable to both the switching instant and the switching interval. By combining semi-Markov kernel and Lyapunov function method, a state feedback controller with no disturbance transfer performance is designed and its effectiveness is verified by numerical example.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 8","pages":"1118-1122"},"PeriodicalIF":4.9,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144750907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SPECTRUM1k – 75 μm Pixels Pitch IC With In-Pixel Histogramming for X-Ray Color Imaging SPECTRUM1k - 75 μm像素间距IC与像素内直方图用于x射线彩色成像
IF 4.9 2区 工程技术
IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2025-06-23 DOI: 10.1109/TCSII.2025.3579856
P. Kmon;R. Kleczek;R. Szczygiel;G. Wegrzyn
{"title":"SPECTRUM1k – 75 μm Pixels Pitch IC With In-Pixel Histogramming for X-Ray Color Imaging","authors":"P. Kmon;R. Kleczek;R. Szczygiel;G. Wegrzyn","doi":"10.1109/TCSII.2025.3579856","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3579856","url":null,"abstract":"A new single photon-counting IC prototype called SPECTRUM1k with pixel matrix <inline-formula> <tex-math>$40times 24$ </tex-math></inline-formula> and pixel pitch <inline-formula> <tex-math>$75~mu $ </tex-math></inline-formula>m is developed by the Microelectronics Group of the AGH University of Krakow as a solution for X-ray color imaging. The chip, produced in CMOS 40nm technology, is made up of 960 individually configured pixels, each composed of an amplifier, an analog-to-digital converter, and <inline-formula> <tex-math>$64times 12$ </tex-math></inline-formula>-bit memory cells that allow one to perform in-pixel energy histogramming. Thanks to the proposed architecture working with the 200 MHz chip clock and 1 Gcps/mm2 multi energy photon intensities up-to about 23 ms exposition time is feasible (<inline-formula> <tex-math>$365~mu $ </tex-math></inline-formula>s exposition time whenever monoenergetic photons are used only). In-pixel offsets (<inline-formula> <tex-math>${=} 3.5$ </tex-math></inline-formula>%) and gain (<inline-formula> <tex-math>${=} 5.8$ </tex-math></inline-formula>%) spread, the amplifier performance (Equivalent Noise Charge <inline-formula> <tex-math>${=} 95$ </tex-math></inline-formula> e-RMS) and the ADC resolution (Effective Number of Bits <inline-formula> <tex-math>${=} 5.4$ </tex-math></inline-formula> b) allow to convert the incoming photons’ energy with FWHM <inline-formula> <tex-math>${=} 3.7$ </tex-math></inline-formula> ke @134.2 keV upon <inline-formula> <tex-math>$81~mu $ </tex-math></inline-formula>W or <inline-formula> <tex-math>$48~mu $ </tex-math></inline-formula>W per pixel power consumption. In this publication, we present a description of the ASIC’s architecture as well as characterization results. The threshold dispersions, gain spread as well as noise and energy measurement performance of the SPECTRUM1k are presented.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 8","pages":"1003-1007"},"PeriodicalIF":4.9,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11046196","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144750852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Small-Signal Modeling of an S-S Compensated IPT System Under Frequency Modulation 调频下S-S补偿IPT系统的小信号建模
IF 4.9 2区 工程技术
IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2025-06-23 DOI: 10.1109/TCSII.2025.3582261
Tianqi Li;Guangce Zheng;Chaoqun Qi;Haoyu Wang;Yu Liu;Minfan Fu
{"title":"Small-Signal Modeling of an S-S Compensated IPT System Under Frequency Modulation","authors":"Tianqi Li;Guangce Zheng;Chaoqun Qi;Haoyu Wang;Yu Liu;Minfan Fu","doi":"10.1109/TCSII.2025.3582261","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3582261","url":null,"abstract":"Frequency modulation is widely utilized in inductive power transfer systems and is also included in the Qi standard for low-power chargers. This brief examines small-signal modeling and simplification methods using an example of an S-S compensated system under frequency modulation. Initially, it develop models for the resonant components under frequency perturbation, which subsequently help in constructing the model of the resonant tank. By incorporating the models of the inverter and rectifier, it derives a sixth-order model for the entire system. The pole-zero analysis helps simplify this sixth-order model to a third-order and a first-order model. Experimental results show that these models can accurately predict the system’s control-to-output gain up to 1/2, 2/5, and 1/10 of the switching frequency. These models effectively illustrate the impacts of circuit parameters and the trade-offs between accuracy and complexity.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 8","pages":"1113-1117"},"PeriodicalIF":4.9,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144750814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single-Event Upset Monitor-Based Radiation-Hardened Latch for Multi-Node Upset 基于单事件镦粗监视器的多节点镦粗辐射硬化闩锁
IF 4.9 2区 工程技术
IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2025-06-23 DOI: 10.1109/TCSII.2025.3582493
Zhan Zheyu;Liu Hainan;Li Duoli;Ma Quangang;Zhao Wenxin;Yan Zhenzhen;Li Bo
{"title":"Single-Event Upset Monitor-Based Radiation-Hardened Latch for Multi-Node Upset","authors":"Zhan Zheyu;Liu Hainan;Li Duoli;Ma Quangang;Zhao Wenxin;Yan Zhenzhen;Li Bo","doi":"10.1109/TCSII.2025.3582493","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3582493","url":null,"abstract":"This brief describes a novel latch design, the Single-Event Upset (SEU) monitoring-based Radiation Hardened Latch (SMRHL), which is robust under multi-node upset (MNU) conditions. The SEU monitoring circuit of SMRHL is designed to detect the presence of SEU events inside the latch and trigger alarm signals accordingly, thus ensuring that the SMRHL can output correct data. The simulation results demonstrate that the proposed SMRHL minimizes the number of SEU-sensitive nodes and achieves a significant improvement of up to 57.9X in power-delay-area-product compared to other state-of-the-art MNU latches. Additionally, the SMRHL’s capability to generate SEU alarm signals enhances reliability at the system architecture level.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 8","pages":"1093-1097"},"PeriodicalIF":4.9,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144750812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Body-Biased Hybrid Sense Amplifier With High Offset Tolerance for Low-Voltage SRAMs 具有高偏置容限的体偏混合感测放大器,用于低压sram
IF 4.9 2区 工程技术
IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2025-06-23 DOI: 10.1109/TCSII.2025.3582549
Minglong Jia;Pengyuan Zhao;Linnan Li;Xiang Li;Zhi Li;Huidong Zhao;Shushan Qiao
{"title":"Body-Biased Hybrid Sense Amplifier With High Offset Tolerance for Low-Voltage SRAMs","authors":"Minglong Jia;Pengyuan Zhao;Linnan Li;Xiang Li;Zhi Li;Huidong Zhao;Shushan Qiao","doi":"10.1109/TCSII.2025.3582549","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3582549","url":null,"abstract":"The offset voltage (VOS) of the Sense Amplifier (SA) is a critical parameter that affects sensing delay and energy consumption in SRAM. This brief proposes a Body-Biased Hybrid Sense Amplifier (BHSA) that effectively reduces the standard deviation (<inline-formula> <tex-math>$sigma {_{text {OS}}}$ </tex-math></inline-formula>) of VOS in low-voltage SRAM applications without need for the additional capacitors or auxiliary control circuits. Results of post-simulation demonstrate that the BHSA shows an average 44% reduction in <inline-formula> <tex-math>$sigma {_{text {OS}}}$ </tex-math></inline-formula> compared to the VLSA across the 0.3-0.9 V supply voltage range, with a specific reduction of 49.4% achieved at 0.3 V. Two 16 kb SRAMs with integrated BHSA and VLSA, respectively, were fabricated under the 22 nm FDSOI technology. Measurements indicates that the SRAM with integrated BHSA achieves a 48.2% reduction in bitline discharge delay and a 13.7% decrease in read power consumption at 0.45 V compared to traditional designs.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 8","pages":"1098-1102"},"PeriodicalIF":4.9,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144750871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
UniPRE: An SNN-ANN Accelerator With Unified Max-Pooling Prediction and Redundancy Elimination UniPRE:具有统一最大池预测和冗余消除的SNN-ANN加速器
IF 4.9 2区 工程技术
IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2025-06-23 DOI: 10.1109/TCSII.2025.3582265
Tao Zhang;Yi Zhong;Youming Yang;Zilin Wang;Zhaotong Zhang;Yuan Wang
{"title":"UniPRE: An SNN-ANN Accelerator With Unified Max-Pooling Prediction and Redundancy Elimination","authors":"Tao Zhang;Yi Zhong;Youming Yang;Zilin Wang;Zhaotong Zhang;Yuan Wang","doi":"10.1109/TCSII.2025.3582265","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3582265","url":null,"abstract":"The integration of Spiking Neural Networks (SNNs) and Artificial Neural Networks (ANNs) for specific tasks has attracted considerable interest due to their potential for high energy efficiency and accuracy. In SNN-ANN fused hardware, many works focus on neuron-level fusion of operators. Though some have explored optimizations at the dataflow level, they are restricted to only one kind of networks. This brief introduces a dataflow-level unified predicting method to eliminate redundant computations resulted from max-pooling operations for both SNN and ANN by exploiting Channel-wise Importance (CI). An accelerator with online sorting of Channel-wise Importance (CI) to support this optimization is also proposed, named as UniPRE. Results show that UniPRE reduces 44.77% and 31.85% overall computations with negligible accuracy loss for SNN and ANN using 37.5% channels for prediction. Implemented in the standard 28-nm CMOS technology, UniPRE can reach an energy efficiency of 19.32 TSOPS/W and 4.26 TOPS/W, with an area efficiency of 370.10 GSOPS/mm2 and 92.52 GOPS/mm2 for SNN and ANN paradigms of 8-bit weight precision, respectively. In layer-wise evaluation of real networks, up to <inline-formula> <tex-math>$1.79times $ </tex-math></inline-formula> energy reduction is achieved with 25% channels used for prediction.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 8","pages":"1088-1092"},"PeriodicalIF":4.9,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144750953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
HIMAM: Hardware Implementation of Multiply-and-Max/Min Layers for Energy-Efficient DNN Inference 高效DNN推理的乘和最大/最小层的硬件实现
IF 4.9 2区 工程技术
IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2025-06-20 DOI: 10.1109/TCSII.2025.3581784
Fanny Spagnolo;Pasquale Corsonello;Stefania Perri
{"title":"HIMAM: Hardware Implementation of Multiply-and-Max/Min Layers for Energy-Efficient DNN Inference","authors":"Fanny Spagnolo;Pasquale Corsonello;Stefania Perri","doi":"10.1109/TCSII.2025.3581784","DOIUrl":"https://doi.org/10.1109/TCSII.2025.3581784","url":null,"abstract":"This Brief presents HIMAM: the first hardware implementation of the Multiply-and-Max/Min (MAM) layers, recently proposed as an effective alternative to the traditional Multiply-and-Accumulate (MAC) paradigm used in Deep Neural Networks (DNNs). The proposed design relies on a specialized hardware architecture that uses floating-point arithmetic and was devised to implement the unconventional multiply then compare-and-add pipeline involved in MAM layers. Based on the observation that such a paradigm actually requires just few product operations to be accurately computed, we propose to replace the most computational intensive components with approximate ones. The FPGA-based implementation carried out on a Zynq Ultrascale+ device and operating in 32-bit floating-point mode exhibits 10.91 GFLOPS/W. When implemented on a 28-nm FDSOI technology process, such an architecture dissipates only 5.3 mW running at 250 MHz, which is at least 41.7% lower than the MAC-based state-of-the-art hardware architectures.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 8","pages":"1083-1087"},"PeriodicalIF":4.9,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11045655","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144750853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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