{"title":"A 2-MHz BW 64.5-dB SNDR 0.45-1.05 GHz Direct IF/RF Digitization Subsampling Bandpass DSM Utilizing a Capacitive-Stacking N-Path Filter","authors":"Xiao Wang;Runkun Li;Xin Sun;Kong-Pang Pun","doi":"10.1109/TCSII.2025.3587662","DOIUrl":null,"url":null,"abstract":"This brief presents a novel subsampling bandpass Delta-Sigma modulator (BPDSM) based on transconductor (Gm) - N-path filters (NPF) for direct radio-frequency (RF) / intermediate-frequency (IF) digitization. The proposed architecture introduces two key innovations. First, a subsampling technique is applied that places the input center frequency at <inline-formula> <tex-math>$(3/4) f_{S}$ </tex-math></inline-formula> (versus conventional <inline-formula> <tex-math>$f_{S}/4$ </tex-math></inline-formula> operation), where <inline-formula> <tex-math>$f_{S}$ </tex-math></inline-formula> is the sampling frequency. Second, a capacitive-stacking NPF that provides 6-dB passive gain is utilized for: (1) suppressing the amplifier’s thermal noise when referred to the modulator’s input; (2) improving the quantization noise shaping by eliminating redundant notches at even multiples of <inline-formula> <tex-math>$f_{S}/4$ </tex-math></inline-formula> in the modulator’s noise transfer function. Fabricated in 65-nm CMOS, the modulator prototype occupies 0.11 mm2 and achieves 0.45 - 1.05 GHz tunability, the highest upper frequency reported for Gm-NPF BPDSMs to the best of the authors’ knowledge. When clocked at 800-MHz, it demonstrates a 64.5-dB peak SNDR over 2-MHz bandwidth centered at 601-MHz, consuming 0.37 mW from a 1.2-V supply. The design records state-of-the-art figure of merit (FoM) values of 161.8 dB Schreier’s FoM and 67.4 fJ/conversion-step Walden’s FoM for BPDSMs operating above 450 MHz.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 9","pages":"1138-1142"},"PeriodicalIF":4.9000,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems II: Express Briefs","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11077732/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This brief presents a novel subsampling bandpass Delta-Sigma modulator (BPDSM) based on transconductor (Gm) - N-path filters (NPF) for direct radio-frequency (RF) / intermediate-frequency (IF) digitization. The proposed architecture introduces two key innovations. First, a subsampling technique is applied that places the input center frequency at $(3/4) f_{S}$ (versus conventional $f_{S}/4$ operation), where $f_{S}$ is the sampling frequency. Second, a capacitive-stacking NPF that provides 6-dB passive gain is utilized for: (1) suppressing the amplifier’s thermal noise when referred to the modulator’s input; (2) improving the quantization noise shaping by eliminating redundant notches at even multiples of $f_{S}/4$ in the modulator’s noise transfer function. Fabricated in 65-nm CMOS, the modulator prototype occupies 0.11 mm2 and achieves 0.45 - 1.05 GHz tunability, the highest upper frequency reported for Gm-NPF BPDSMs to the best of the authors’ knowledge. When clocked at 800-MHz, it demonstrates a 64.5-dB peak SNDR over 2-MHz bandwidth centered at 601-MHz, consuming 0.37 mW from a 1.2-V supply. The design records state-of-the-art figure of merit (FoM) values of 161.8 dB Schreier’s FoM and 67.4 fJ/conversion-step Walden’s FoM for BPDSMs operating above 450 MHz.
期刊介绍:
TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes:
Circuits: Analog, Digital and Mixed Signal Circuits and Systems
Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic
Circuits and Systems, Power Electronics and Systems
Software for Analog-and-Logic Circuits and Systems
Control aspects of Circuits and Systems.