具有双向20db增益控制的超紧凑ka波段折叠相控阵收发器前端

IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Shiwei Wu;Dongfang Pan;Laifu Jin;Lin Cheng
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引用次数: 0

摘要

本简报介绍了一种采用65纳米CMOS技术实现的超紧凑ka波段相控阵收发器前端。该设计集成了一个折叠可变增益前端和一个无源可变增益移相器。可变增益前端采用堆叠的8形变压器实现了合并的接收和发射通道布局设计。无源变增益移相器利用带耦合线的可衰减匹配变压器实现双向增益和相位控制。该收发器可实现20 dB双向增益范围、360°相位控制、0.5 dB增益步长和5.625°相位步长,满足相控阵系统的严格要求。测量表明,在32.3-37.7 GHz频率范围内,最大RMS相位误差为3.6°,RMS增益误差为0.41 dB。核心面积仅为0.345 mm2,与之前的设计相比,面积减少了50%以上,非常适合大规模相控阵应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An Ultra-Compact Ka-Band Folded Phased-Array Transceiver Front-End With Bidirectional 20-dB Gain Control
This brief presents an ultra-compact Ka-band phased-array transceiver front-end implemented in 65-nm CMOS technology. The proposed design integrates a folded variable gain front-end and a passive variable gain phase shifter. The variable gain front-end achieves a merged receive and transmit channel layout design with stacked 8-shaped transformers. The passive variable gain phase shifter accomplishes bidirectional gain and phase control using the attenuable matching transformer with coupling lines. The transceiver achieves a 20 dB bidirectional gain range, 360° phase control, 0.5 dB gain steps, and 5.625° phase steps, meeting the stringent requirements of phased-array systems. Measurements demonstrate a maximum RMS phase error of 3.6° and an RMS gain error of 0.41 dB over the 32.3-37.7 GHz frequency range. The core occupies just 0.345 mm2, representing a more than 50% reduction in area compared to prior designs, making it highly suitable for large-scale phased-array applications.
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来源期刊
IEEE Transactions on Circuits and Systems II: Express Briefs
IEEE Transactions on Circuits and Systems II: Express Briefs 工程技术-工程:电子与电气
CiteScore
7.90
自引率
20.50%
发文量
883
审稿时长
3.0 months
期刊介绍: TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: Circuits: Analog, Digital and Mixed Signal Circuits and Systems Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic Circuits and Systems, Power Electronics and Systems Software for Analog-and-Logic Circuits and Systems Control aspects of Circuits and Systems.
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