用于超大像素阵列CMOS图像传感器的高速双反馈环路列缓冲器

IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Liu Suiyang;Guo Zhongjie;Xu Ruiming;Yu Ningmei
{"title":"用于超大像素阵列CMOS图像传感器的高速双反馈环路列缓冲器","authors":"Liu Suiyang;Guo Zhongjie;Xu Ruiming;Yu Ningmei","doi":"10.1109/TCSII.2025.3587906","DOIUrl":null,"url":null,"abstract":"With the development of stitching processes, the resolution of CMOS image sensors has significantly improved, especially in applications such as earth observation and deep space exploration. Although the column-parallel, row-serial readout has numerous advantages and is considered the ideal sensor architecture, it still has frame rate issues caused by the long length of the serial output bus, which leads to large parasitic parameters of the metal lines. Therefore, this brief proposes a dual feedback loop column buffer that implements parallel-serial conversion while introducing the switching on-resistance within the loop to reduce the settling time of the output signal and stabilize the phase margin. A chip containing <inline-formula> <tex-math>$12288{\\times }12288$ </tex-math></inline-formula> pixels was fabricated using CMOS 55nm 1P4M technology. With a 48-channel output, the chip achieves a frame rate of 10.36 fps. Compared to the single feedback loop column buffer, the risetime of the output signal is reduced by 23.4%, the falltime by 21.9%, and the overall frame rate is improved by 29.6%.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 9","pages":"1143-1147"},"PeriodicalIF":4.9000,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A High-Speed Dual Feedback Loop Column Buffer for Ultra Large Pixel Array CMOS Image Sensors\",\"authors\":\"Liu Suiyang;Guo Zhongjie;Xu Ruiming;Yu Ningmei\",\"doi\":\"10.1109/TCSII.2025.3587906\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With the development of stitching processes, the resolution of CMOS image sensors has significantly improved, especially in applications such as earth observation and deep space exploration. Although the column-parallel, row-serial readout has numerous advantages and is considered the ideal sensor architecture, it still has frame rate issues caused by the long length of the serial output bus, which leads to large parasitic parameters of the metal lines. Therefore, this brief proposes a dual feedback loop column buffer that implements parallel-serial conversion while introducing the switching on-resistance within the loop to reduce the settling time of the output signal and stabilize the phase margin. A chip containing <inline-formula> <tex-math>$12288{\\\\times }12288$ </tex-math></inline-formula> pixels was fabricated using CMOS 55nm 1P4M technology. With a 48-channel output, the chip achieves a frame rate of 10.36 fps. Compared to the single feedback loop column buffer, the risetime of the output signal is reduced by 23.4%, the falltime by 21.9%, and the overall frame rate is improved by 29.6%.\",\"PeriodicalId\":13101,\"journal\":{\"name\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"volume\":\"72 9\",\"pages\":\"1143-1147\"},\"PeriodicalIF\":4.9000,\"publicationDate\":\"2025-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11077705/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems II: Express Briefs","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11077705/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

随着拼接工艺的发展,CMOS图像传感器的分辨率有了显著提高,特别是在对地观测和深空探测等应用中。虽然列-并联,行-串行读出具有许多优点,被认为是理想的传感器架构,但由于串行输出总线的长度太长,导致金属线的寄生参数很大,因此仍然存在帧率问题。因此,本文提出了一种双反馈环路列缓冲器,在实现并联-串行转换的同时,在环路内引入开关导通电阻,以减少输出信号的稳定时间并稳定相位裕度。采用CMOS 55nm 1P4M技术制备了包含$12288{\times}12288$像素的芯片。该芯片采用48通道输出,帧率可达10.36 fps。与单反馈环路列缓冲器相比,输出信号的上升时间减少23.4%,下降时间减少21.9%,整体帧率提高29.6%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A High-Speed Dual Feedback Loop Column Buffer for Ultra Large Pixel Array CMOS Image Sensors
With the development of stitching processes, the resolution of CMOS image sensors has significantly improved, especially in applications such as earth observation and deep space exploration. Although the column-parallel, row-serial readout has numerous advantages and is considered the ideal sensor architecture, it still has frame rate issues caused by the long length of the serial output bus, which leads to large parasitic parameters of the metal lines. Therefore, this brief proposes a dual feedback loop column buffer that implements parallel-serial conversion while introducing the switching on-resistance within the loop to reduce the settling time of the output signal and stabilize the phase margin. A chip containing $12288{\times }12288$ pixels was fabricated using CMOS 55nm 1P4M technology. With a 48-channel output, the chip achieves a frame rate of 10.36 fps. Compared to the single feedback loop column buffer, the risetime of the output signal is reduced by 23.4%, the falltime by 21.9%, and the overall frame rate is improved by 29.6%.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Transactions on Circuits and Systems II: Express Briefs
IEEE Transactions on Circuits and Systems II: Express Briefs 工程技术-工程:电子与电气
CiteScore
7.90
自引率
20.50%
发文量
883
审稿时长
3.0 months
期刊介绍: TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: Circuits: Analog, Digital and Mixed Signal Circuits and Systems Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic Circuits and Systems, Power Electronics and Systems Software for Analog-and-Logic Circuits and Systems Control aspects of Circuits and Systems.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信