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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.最新文献

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Ultrafast carrier trapping in high energy ion implanted indium phosphide 高能离子注入磷化铟的超快载流子捕获
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242760
C. Camody, H. Boudinov, H. Tan, C. Jagadish, L. Dao, M. Gal
{"title":"Ultrafast carrier trapping in high energy ion implanted indium phosphide","authors":"C. Camody, H. Boudinov, H. Tan, C. Jagadish, L. Dao, M. Gal","doi":"10.1109/SIM.2002.1242760","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242760","url":null,"abstract":"","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115264418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Visible rown-temperature photoluminescence of AlN films, prepared by RF magnetron sputtering 射频磁控溅射制备AlN薄膜的可见高温光致发光特性
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242740
V. Ligatchev, T. Wong, S. Yoon, J. Ahn, Rusli
{"title":"Visible rown-temperature photoluminescence of AlN films, prepared by RF magnetron sputtering","authors":"V. Ligatchev, T. Wong, S. Yoon, J. Ahn, Rusli","doi":"10.1109/SIM.2002.1242740","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242740","url":null,"abstract":"","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115293906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
LT (Al)GaAs and Al(Ga)As/AlAsSb oxides for electronic applications 电子用LT (Al)GaAs和Al(Ga)As/AlAsSb氧化物
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242738
J. Champlain, C. Zheng, U. Mishra
{"title":"LT (Al)GaAs and Al(Ga)As/AlAsSb oxides for electronic applications","authors":"J. Champlain, C. Zheng, U. Mishra","doi":"10.1109/SIM.2002.1242738","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242738","url":null,"abstract":"Research into various areas of III-V electronics is presented. GaAs MESFETs passivated with LT Al/sub x/Ga/sub 1-x/As showed increased breakdown voltages (V/sub bkd/=43V) over standard devices (V/sub bkd/=8V). MESFETs and pHEMTs fabricated with insulating oxide buffers (GaAs-On-lnsulator) produced world record power-added efficiencies (PAE=88%). Recently, research has been oriented towards collector-up with oxide current confinement layers for high gain, high speed performance.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114495530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hopping conduction in lithium diffused and annealed GaAs 锂扩散退火砷化镓中的跳变传导
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242715
J. Gudmundsson, H. Svavarsson, H. Gíslason
{"title":"Hopping conduction in lithium diffused and annealed GaAs","authors":"J. Gudmundsson, H. Svavarsson, H. Gíslason","doi":"10.1109/SIM.2002.1242715","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242715","url":null,"abstract":"Temperature dependent conductivity and Hall effect measurements were carried out in the temperature range 30-300 K on Li-diffused and annealed GaAs. Li in-diffusion into GaAs reduces the free carrier concentration which leads to electrical conductivity as low as 10/sup -7/ S/cm. Annealing the lithium diffused samples at temperatures above 200/spl deg/C significantly increases the room temperature conductivity to 1-10 S/cm, depending on the annealing temperature. In samples annealed at 300-500/spl deg/C the temperature dependence of the conductivity indicates that hopping conduction sets in at temperatures below 100 K. We relate this to enhanced gallium vacancy (V/sub Ga/) and gallium antisite (Ga/sub As/) concentration in Li in-diffused and annealed samples.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131940466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single Heterojunction barrier at terahertz frequency 太赫兹频率的单异质结势垒
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242757
M. Horák
{"title":"Single Heterojunction barrier at terahertz frequency","authors":"M. Horák","doi":"10.1109/SIM.2002.1242757","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242757","url":null,"abstract":"Single hetcrostmcture barrier is a substantial part of a wide spectrum of twoand three-terminal devices. The mechanisms of current flow across the barrier are very important from the paint of view of electronic device physics. Depending on a layer composition, materials, doping profiles and external electric field electrons and holes in such structures participate in different emission and tunneling processes. The heterastructure barrier can act as a simple electron emitter especially in different hat electron devices [2]; for this purpose the barrier should be transparent. Another structure is the single heterojunction barrier varactor diode (HBV) that has received considerable attention as a promising device for high frequency multiplication in the milimeter to submilimeter wavelength range. The device consists of a large bandgap semiconductor sandwiched between symmetric moderately doped modulation regions of a smaller bandgap material [4], [6]. Although the investigation of high frequency effects is of great importance for electronics, papers concerning high-frequency phenomena are usually devoted to the resonant tunnelling diodes [I], [3] and different types of potential barriers are rarely investigated.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"44 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131294854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advanced X-ray imaging techniques for semiconductor wafer characterisation 用于半导体晶圆表征的先进x射线成像技术
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242745
T. Baumbach, P. Mikulík, D. Korytár, P. Pernot, D. Lubbert, L. Helfen, M. Herms, C. Landesberger
{"title":"Advanced X-ray imaging techniques for semiconductor wafer characterisation","authors":"T. Baumbach, P. Mikulík, D. Korytár, P. Pernot, D. Lubbert, L. Helfen, M. Herms, C. Landesberger","doi":"10.1109/SIM.2002.1242745","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242745","url":null,"abstract":"High-quality X-ray imaging by use of synchrotron radiation permits semiconductor wafer characterisation with down to micrometer resolution. We report results of X-ray topography and mea dzrracrometp for the detection of surface damage generated by grinding of ultra-thin wafers and its removal in subsequent technological steps. We present a method of quantitative imaging of lattice deformations and micrometer resolved tiltand twist mops applied to macro-defects in GaAs and deformationfields after gluing ofultra-thin wafers.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131644199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deep-trap governed carrier dynamics in semi-insulating crystals analyzed by time-resolved four-wave mixing technique 用时间分辨四波混频技术分析半绝缘晶体的深阱控制载流子动力学
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242747
K. Jarašiūnas, M. Sūdžius, R. Aleksieju̅nas
{"title":"Deep-trap governed carrier dynamics in semi-insulating crystals analyzed by time-resolved four-wave mixing technique","authors":"K. Jarašiūnas, M. Sūdžius, R. Aleksieju̅nas","doi":"10.1109/SIM.2002.1242747","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242747","url":null,"abstract":"We demonstrate versatile applications of a nonlinear, four wave mixing (FWM) technique to study deep-impurity governed carrier generation. transport and recombination by monitoring subnanosecond dynamics of light difraction onfree carrier grating. Role of transport-created space chargefield to carrier dynamics is analyzed numerically and studied experimentally in semi-insulating CdTe: K CdTetCe, and GaAs:EL2. We present a novel way to determine the conductivi@ type of a photorefractive cryrtal doped by deep and codoped by shallow impurities. FWM technique is extended to monitor transient photoquenching of EL2 in GaAs at 300 K, control the compensation ratio of deep trap. map the spatial distribution of defects in GaAs w+-s , and study ultrafast recombination in vicinity ofdislocotions.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122452461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Space-grown SI-GaAs and its application 空间生长SI-GaAs及其应用
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242714
N. Chen, X. Zhong, Mian Zhang, Lan-ying Lin
{"title":"Space-grown SI-GaAs and its application","authors":"N. Chen, X. Zhong, Mian Zhang, Lan-ying Lin","doi":"10.1109/SIM.2002.1242714","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242714","url":null,"abstract":"A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-travelling furnace under microgravity. The crystal was characterized systematically and was used in fabricating low noise field effect transistors and analogue switch integrated circuits by the direct ion-implantation technique. All key electrical properties of these transistors and integrated circuits have surpassed those made from conventional earth-grown gallium arsenide. This result shows that device-grade space-grown semiconducting single: crystal has surpassed the best terrestrial counterparts. Studies on the correlation between SI-GaAs wafers and the electronic devices and integrated circuits indicate that the characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128172889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaAs for X-imaging and particle detectors 用于x成像和粒子探测器的砷化镓
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242721
A.I. Ayzenshtat, D. Budnitsky, O. B. Koretskaya, L. Okaevich, V. A. Novikov, A. I. Potapov, O. Tolbanov, A. Tyazhev, A. Vorobiev
{"title":"GaAs for X-imaging and particle detectors","authors":"A.I. Ayzenshtat, D. Budnitsky, O. B. Koretskaya, L. Okaevich, V. A. Novikov, A. I. Potapov, O. Tolbanov, A. Tyazhev, A. Vorobiev","doi":"10.1109/SIM.2002.1242721","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242721","url":null,"abstract":"Among prospect semiconductor materials for ionizing radiation detectors, GaAs looks very promising due to it high carrier mobility, wide band gap and high density. A comparative analysis of physical and electrical characteristics of GaAs semi-insulating layers (SI-GaAs) fabricated by means of different technological methods is given in this work. The main parameters of detector structures and multi-element detectors based on SI-GaAs are presented.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131065414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoenhanced wet etching of n-gallium nitride 氮化镓的光增强湿法蚀刻
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242725
J. Škriniarová, M. Michalka, F. Uherek, P. Kordos
{"title":"Photoenhanced wet etching of n-gallium nitride","authors":"J. Škriniarová, M. Michalka, F. Uherek, P. Kordos","doi":"10.1109/SIM.2002.1242725","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242725","url":null,"abstract":"Photoassisted electrochemical (PEC) etching of n-doped GaN layer grown on sapphire in a KOH based solution under illumination of a Hg arc lamp is demonstrated. Smooth surfaces were obtained for a narrow range of etching conditions. It was found that this window could be extended by using etch conditions which produced \"whiskers\". Subsequent post treatment in developer AZ 400 K and KOH solution was used to remove these whiskers. An influence of the surface treatment of GaN by wet chemical etching prior to the Schottky barrier metal deposition was investigated.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130959053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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