LT (Al)GaAs and Al(Ga)As/AlAsSb oxides for electronic applications

Abstract

Research into various areas of III-V electronics is presented. GaAs MESFETs passivated with LT Al/sub x/Ga/sub 1-x/As showed increased breakdown voltages (V/sub bkd/=43V) over standard devices (V/sub bkd/=8V). MESFETs and pHEMTs fabricated with insulating oxide buffers (GaAs-On-lnsulator) produced world record power-added efficiencies (PAE=88%). Recently, research has been oriented towards collector-up with oxide current confinement layers for high gain, high speed performance.