12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.最新文献

{"title":"Differences and similarities between structural properties of GaN grown by different growth methods","authors":"Z. Liliental-Weber, J. Jasinski, J. Washburn","doi":"10.1109/SIM.2002.1242728","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242728","url":null,"abstract":"In this paper, defects formed in GaN grown by different methods are reviewed. The crystal growth direction and growth rate play important roles. For bulk crystals grown under high pressure the highest growth rates are for planes perpendicular to the c-axis. Only planar defects formed on c-planes are observed in these crystals. There are no threading dislocations or nanotubes in the c-direction. However, polarity of the growth direction plays a role in the surface roughness and the distribution of planar defects. For the growth of homo-epitaxial and hetero-epitaxial layers, the growth is forced to take place in the much slower c-direction. As a result, defects related to the purity of constituents used for the growth are formed such as nanotubes and pinholes. In addition, threading dislocations and dislocations that accommodate lattice and thermal expansion mismatch are formed.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131906481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrical isolation of ZnO by ion irradiation","authors":"S. Kucheyev, C. Jagadish, J.S. Williams, P. Deenapanray, M. Yano, K. Koike, S. Sasa, M. Inoue, K. Ogata","doi":"10.1109/SIM.2002.1242743","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242743","url":null,"abstract":"We demonstrate the formation of highly resistive single-crystal ZnO epilayers as a result of irradiation with MeV Li, O, and Si ions. Results show that the ion doses necessary for electrical isolation close-to-inversely depend on the number of ion-beam-generated atomic displacements. However, in all the cases studied, defect-induced electrical isolation of ZnO is unstable to rapid thermal annealing at temperatures above about 300 C . No significant improvement of thermal stability is found by varying ion mass, dose, and irradiation temperature (up to 350 C). Finally, a comparison of implant isolation in ZnO with that in GaN is presented.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115095307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs","authors":"Y. Mitani, A. Wakabayashi, K. Horio","doi":"10.1109/SIM.2002.1242772","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242772","url":null,"abstract":"Effects of surface deep levels on breakdown characteristics of nnrrowly-recessedgate GaAs MESFETs are studied by two-dimensional analysis. I t is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is suggested that in n case with relatively high densifies of surface states, the breakdown vollage could be drastically lowered by introducing a narrowly-Tecess=d-g=te structure.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124922187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two- and three-dimensional arrays of nanoscale as clusters in low-temperature grown GaAs","authors":"N. Bert, N. Cherkashin, V. Chaldyshev, A. Claverie, V. Preobrazhenskii, M. A. Putyato, B. Semyagin, P. Werner","doi":"10.1109/SIM.2002.1242762","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242762","url":null,"abstract":"N. A. Bert’), N. A. Cherkashinl’, V. V. Chaldyshevl’, A. Claverie”’, V. V. Preobra~henskii~’, M. A. Putyato”, B. R. Semyagin”, and P. Wemer4) ’’ loffe Physico-Technical Institute, St. Petersburg 194021 Russia ” CEMESICNRS, 29 rue Jeanne Marvig, BR 4347, F-3 1055 Toulouse Cedex 4, France ’) lnstitute of Semiconductor Physics, Novosibirsk 630090 Russia ‘) Max-Plank-lnstitut fuer Mikrostrukturphysik, HalleISale D-06120 Germany e-mail: nikolay.bert@mail.ioffe.ru","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125921613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Luminescence properties of semi-insulating nominally-undoped CdTe crystals","authors":"A. Zappettini, V. Corregidor, E. Dieguez, M. Zha, F. Bissoli, L. Zanotti","doi":"10.1109/SIM.2002.1242736","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242736","url":null,"abstract":"CdTe crystals were grown by the vapour phase and by Bridgman method by using high purity and stoichiometry controlled source material. Nominally undoped high resistivity crystals were reproducibly obtained. A detailed photoluminescence (PL) analysis was carried out in order to investigate the compensation mechanism of the crystals. PL spectra are dominated by the bound acceptor exciton line at 1.588 eV, showing a \"p\" type character. A line at 1.583 eV is also present possibly due to III group impurities. A week 1.4 eV band was also revealed.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134089264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth of InP substrate crystals by the vertical gradient freeze technique","authors":"U. Sahr, G. Muller","doi":"10.1109/SIM.2002.1242716","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242716","url":null,"abstract":"InP substrate crystals are grown by different methods. The VGF-technology provides the best conditions to produce high quality crystals. In the 80 's InP-crystals were grown by the VGF-technique for the first time. Today the VGF-technique is a commercial process and semi-insulating substrates up to 6\" in diameter are available. At the Crystal Growth Laboratory in Erlangen the VGF-growth of InP is investigated. VGF-growth facilities were developed by the aid of computer simulation. The grown crystals exhibit low dislocation density and high uniformity.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131211743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth and fundamental properties of GeSi bulk crystals","authors":"I. Yonenaga","doi":"10.1109/SIM.2002.1242731","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242731","url":null,"abstract":"In this paper, we attempted the Czochralski growth of GeSi bulk crystals of large size in the whole composition range 0 < x <1and succeeded in growing full single crystals of GeSi alloys of large size within the composition ranges of 0 < x < 0.85 < x < 1 . This paper reports the current results on bulk crystal growth of GeSi alloys and on their fundamental properties that are brought about by alloying.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"04 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131320146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical and structural characterisation of CdTe crystals grown by physical vapour transport and Bridgman methods","authors":"N. Armani, C. Ferrari, G. Salviati, F. Bissoli, M. Zha, A. Zappettini, L. Zanotti","doi":"10.1109/SIM.2002.1242732","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242732","url":null,"abstract":"The structural and optical properties of cadmium telluride crystals have been studied by means of X-ray diffraction and SEM-cathodoluminescence techniques. CdTe crystals were grown from the melt by a modified vertical Bridgman method and by physical vapour transport, from a 7N source material and without incorporation of any doping elements. The high resistivity required for the technological applications of this material was obtained only by controlling the stoichiometric ratio between Cd and Te. The crystalline quality of the samples was first checked from the FWHM of the high-resolution X-ray rocking curves. The X-ray topographies reveal an increasing defects density in the low resistivity crystals in addition to the presence of a large number of low angle grain boundaries. The low temperature luminescence spectra show the same emission bands for all the crystals studied except for the 1.4 eV band absent in the p-type Bridgman grown samples.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116879193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High quality quaternary InAlGaN alloys grown by plasma-assisted molecular beam epitaxy","authors":"E. Dimakis, A. Georgakilas, G. Kittler, M. Androulidaki, K. Tsagaraki, E. Bellet-Amalric, D. Jalabert, N. Pelekanos","doi":"10.1109/SIM.2002.1242726","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242726","url":null,"abstract":"We have investigated the growth of InAlGaN alloy thin films and InAlGaN/GaN quantum well (QW) heterostructures by rf plasma-assisted molecular beam epitaxy (RF-MBE). In-situ reflected high-energy electron diffraction (RHEED) was used to optimize the conditions for layer-by-layer growth and 0.25 /spl mu/m thick InAlGaN layers exhibited very smooth surfaces with rms roughness of 0.7-1.0 nm. Sharp X-ray diffraction peaks with 2/spl theta/-widths as low as 3 times that of the commercial GaN template and /spl omega/-widths about the same as the GaN template evidence the good structural quality and compositional uniformity of the InAlGaN alloys. All the InAlGaN samples exhibited intense band-edge photoluminescence up to room temperature with linewidths as lows as 73 meV at 3.25 eV. The InAlGaN bandgap was characterized as a function of the In content, controlled by varying the growth temperature, and a large In-bowing coefficient of 8.4 eV was determined. A significant reduction of the polarization field in InAlGaN/GaN QWs was observed.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125805958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The influence of glow-discharge cleaning of Ge/Pd-GaAs on the specific contact resistivity","authors":"J. Zlámal, V. Myslík, P. Machac","doi":"10.1109/SIM.2002.1242756","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242756","url":null,"abstract":"Compound semiconductors formed from elements in groups 111 and V (111-V) of the periodic table, such as GaAs, have become important materials for microelectronic and optoelectronic applications. These devices are operated at high current densities and are continually undergoing reduction in size. In order to link the active regions of the semiconductor devices to the external circuit, contacts with low electrical resistance (ohmic contacts) are required. This shldy is part of a wide Cffort oriented on improving the electrical properties of ohmic contacts and thus their electrical resistance (specific contact resistivity). Our investigation is focused on capping layer (mainly Pt)/(Sn or Ge)/Pd contact structure on . ' n-type GaAs. Optimization of doping elements [1,2], deposition methods [2], inert atmosphere during annealing [3], absorption-capping layers [1,2,4], cleaning solutions (wet etching) [4] and alloying methods [4] was carried out previously. This paper deals with dry etching of GaAs in situ prior to the deposition of Ge and Pd. Glow-discharge cleaning should be principally applied prior to every vacuum coating process, as every substrate surface, even after careful mechanical cleaning, will retain a water film of several molecular layers. Glow-discharge in this application may be defined as the removal of the adsorbed impurity layers. The substrate to be coated is primarily submitted to a cleaning process. At the same time the substrate temperature rises which is desirable in most cases. An additional positive effect of the glow-discharge is the increased formation of nuclei on the substrate surface. All the above effects contribute to increase the adhesive strength and purity of vapour deposition layers [SI. Annealing is a very important step in the preparation of ohmic contacts. The most used is rapid thermal annealing (RTA) using halogen or discharge lamps. In this rapid heating, only solid-phase reactions occur at the interface. RTA method can also reduce the loss of volatile group V materials, the intermixing of metals and semiconductors, phase segregation and grain growth [6] . Experiments were made in order to optimize the parameters of the glow-discharge cleaning such as polarity of electrode resulting in sputter process or sputter etching, time of cleaning and applied current density of glow-discharge (in range from 56pA.ctK2 to 616 pA.mi2).","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128555004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}