{"title":"Growth of InP substrate crystals by the vertical gradient freeze technique","authors":"U. Sahr, G. Muller","doi":"10.1109/SIM.2002.1242716","DOIUrl":null,"url":null,"abstract":"InP substrate crystals are grown by different methods. The VGF-technology provides the best conditions to produce high quality crystals. In the 80 's InP-crystals were grown by the VGF-technique for the first time. Today the VGF-technique is a commercial process and semi-insulating substrates up to 6\" in diameter are available. At the Crystal Growth Laboratory in Erlangen the VGF-growth of InP is investigated. VGF-growth facilities were developed by the aid of computer simulation. The grown crystals exhibit low dislocation density and high uniformity.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.2002.1242716","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
InP substrate crystals are grown by different methods. The VGF-technology provides the best conditions to produce high quality crystals. In the 80 's InP-crystals were grown by the VGF-technique for the first time. Today the VGF-technique is a commercial process and semi-insulating substrates up to 6" in diameter are available. At the Crystal Growth Laboratory in Erlangen the VGF-growth of InP is investigated. VGF-growth facilities were developed by the aid of computer simulation. The grown crystals exhibit low dislocation density and high uniformity.