Growth of InP substrate crystals by the vertical gradient freeze technique

U. Sahr, G. Muller
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引用次数: 4

Abstract

InP substrate crystals are grown by different methods. The VGF-technology provides the best conditions to produce high quality crystals. In the 80 's InP-crystals were grown by the VGF-technique for the first time. Today the VGF-technique is a commercial process and semi-insulating substrates up to 6" in diameter are available. At the Crystal Growth Laboratory in Erlangen the VGF-growth of InP is investigated. VGF-growth facilities were developed by the aid of computer simulation. The grown crystals exhibit low dislocation density and high uniformity.
垂直梯度冻结法生长InP衬底晶体
用不同的方法生长InP衬底晶体。vgf技术为生产高质量晶体提供了最佳条件。80年代首次用vgf技术生长出了inp晶体。今天,vgf技术是一种商业工艺,直径达6英寸的半绝缘基板是可用的。在埃尔兰根晶体生长实验室,研究了InP的vgf生长。利用计算机模拟技术开发了vgf生长装置。生长的晶体具有低位错密度和高均匀性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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