表面深能级对窄凹栅GaAs mesfet击穿特性的影响

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242772

Y. Mitani, A. Wakabayashi, K. Horio

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引用次数: 0

摘要

采用二维分析方法研究了表面深能级对窄凹栅GaAs mesfet击穿特性的影响。结果表明，当含有中等密度的表面态时，击穿电压可以提高。然而，在表面态密度相对较高的情况下，通过引入窄的tecess =d-g=te结构可以大幅降低击穿电压。

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Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs

Effects of surface deep levels on breakdown characteristics of nnrrowly-recessedgate GaAs MESFETs are studied by two-dimensional analysis. I t is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is suggested that in n case with relatively high densifies of surface states, the breakdown vollage could be drastically lowered by introducing a narrowly-Tecess=d-g=te structure.

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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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