{"title":"Growth and fundamental properties of GeSi bulk crystals","authors":"I. Yonenaga","doi":"10.1109/SIM.2002.1242731","DOIUrl":null,"url":null,"abstract":"In this paper, we attempted the Czochralski growth of GeSi bulk crystals of large size in the whole composition range 0 < x <1and succeeded in growing full single crystals of GeSi alloys of large size within the composition ranges of 0 < x < 0.85 < x < 1 . This paper reports the current results on bulk crystal growth of GeSi alloys and on their fundamental properties that are brought about by alloying.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"04 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.2002.1242731","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we attempted the Czochralski growth of GeSi bulk crystals of large size in the whole composition range 0 < x <1and succeeded in growing full single crystals of GeSi alloys of large size within the composition ranges of 0 < x < 0.85 < x < 1 . This paper reports the current results on bulk crystal growth of GeSi alloys and on their fundamental properties that are brought about by alloying.