Growth and fundamental properties of GeSi bulk crystals

I. Yonenaga
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Abstract

In this paper, we attempted the Czochralski growth of GeSi bulk crystals of large size in the whole composition range 0 < x <1and succeeded in growing full single crystals of GeSi alloys of large size within the composition ranges of 0 < x < 0.85 < x < 1 . This paper reports the current results on bulk crystal growth of GeSi alloys and on their fundamental properties that are brought about by alloying.
GeSi块状晶体的生长和基本性质
在本文中,我们尝试了在0 < x <1的组成范围内生长大尺寸GeSi块状晶体,并成功地在0 < x < 0.85 < x <1的组成范围内生长了大尺寸GeSi合金的完整单晶。本文报道了GeSi合金体晶生长及其合金化带来的基本性能的最新研究结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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