Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs

Abstract

Effects of surface deep levels on breakdown characteristics of nnrrowly-recessedgate GaAs MESFETs are studied by two-dimensional analysis. I t is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is suggested that in n case with relatively high densifies of surface states, the breakdown vollage could be drastically lowered by introducing a narrowly-Tecess=d-g=te structure.