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Optical properties of group-III nitride based quantum wells iii族氮基量子阱的光学性质
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242761
P. Lefebvre
{"title":"Optical properties of group-III nitride based quantum wells","authors":"P. Lefebvre","doi":"10.1109/SIM.2002.1242761","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242761","url":null,"abstract":"Quantum wells based on hexagonal group-IN nitrides have numerous original properties. III particular, inrernnl electric Jklds are present along rhe growrh axis, r-eoching several MV/cm. The coniperifion between radiorive and nowadiative recombinations ofelectron-hole pairs in rhese novel nano-objecrs is analysed by nrensuriizg rhe rime-resolvedphotoluminesceIice of series of samples. The respective influences of electric fields and localisatioii of carriers, on the opricalproperries oflnGaN/GaN quantum wells, are unravelled. The scaling luw obsefved fbphofoluminescence rime decays arid the giant coiipling behveen LOphonons arid elecrron-hole pairs alp interpreted in terms of an original and efticieiit description o/the mechanisms involved in optical reronibinations.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126945568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature influence on the spectrometric performances of the radiation detector based on semi-insulating GaAs 温度对半绝缘砷化镓辐射探测器光谱性能的影响
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242769
B. Zat’ko, F. Dubecký, V. Nečas
{"title":"Temperature influence on the spectrometric performances of the radiation detector based on semi-insulating GaAs","authors":"B. Zat’ko, F. Dubecký, V. Nečas","doi":"10.1109/SIM.2002.1242769","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242769","url":null,"abstract":"","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127918741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The thermal stability of Ni and Ni/Au ohmic contacts to n-type 4H-SiC Ni和Ni/Au欧姆接触对n型4H-SiC的热稳定性
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242733
B.K. Kim, J. Burm, C. An
{"title":"The thermal stability of Ni and Ni/Au ohmic contacts to n-type 4H-SiC","authors":"B.K. Kim, J. Burm, C. An","doi":"10.1109/SIM.2002.1242733","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242733","url":null,"abstract":"The thermal stability of ohmic contacts to 4H-SiC was studied by ageing test for the high power and high temperature application of SiC devices. Ni and Ni/Au ohmic contacts in a transmission line model (TLM) test structure were formed on n-type 4H-SiC with rapid thermal annealing (RTA). The as-annealed contact resistivity was in the range of 10/sup 3//spl sim/10/sup -6/ /spl Omega/cm/sup 2/. The contact resistivity after ageing at 500/spl deg/C showed that Ni ohmic contacts were thermally stable and Ni/Au ohmic contacts were not. The chemical component depth profiles of Auger electron spectroscopy (AES) measurement also showed Ni ohmic contacts thermally stable, and suggest the formation of passivation layer on the surface of Ni/Au contacts after RTA process.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121308567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Plasma deposited N-doped a-SiC:H films: characterization 等离子沉积n掺杂a-SiC:H薄膜:表征
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242737
J. Huran, I. Hotovy, A. Kobzev, N. Balalykin
{"title":"Plasma deposited N-doped a-SiC:H films: characterization","authors":"J. Huran, I. Hotovy, A. Kobzev, N. Balalykin","doi":"10.1109/SIM.2002.1242737","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242737","url":null,"abstract":"We present the properties of nitrogen-doped amorphous silicon carbide films that were grown by PECVD technique and annealed by a pulsed electron beam. Samples with different amounts of N were achieved by a small addition of ammonia NH/sub 3/ into the gas mixture of silane SiH/sub 4/ and methane CH/sub 4/, which were directly introduced into the reaction chamber. A simulation of the RBS spectra was used to calculate the concentration of carbon, silicon and nitrogen. The current-voltage (I-V) characteristics of diodes made of doped and irradiated SiC films grown on silicon substrates were studied.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121569954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heteroepitaxy of GaN on Si(111) 异构体或GaN on Si(111)
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242722
A. Krost, A. Dadgar
{"title":"Heteroepitaxy of GaN on Si(111)","authors":"A. Krost, A. Dadgar","doi":"10.1109/SIM.2002.1242722","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242722","url":null,"abstract":"The growth of high-quality group-III-nitrides on silicon is very attractive for low-cost optoelectronic and electronic devices such as light emitting diodes or field effect transistor. However, attempts to grow GaN on Si suffered from large lattice and thermal mismatch and the strong chemical reactivity of Ga and Si at elevated temperatures so far. The latter problem can be easily solved using gallium-free seed layers AlN. The key problem for device structure growth on Si is the thermal mismatch leading to cracks for layer thicknesses above 1 /spl mu/m. The cracks can be overcome by several concepts as, e.g patterning the substrate and/or the insertion of low-temperature (LT) AlN interlayers which enable the growth of device-relevant GaN thicknesses.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128034259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Influence of isochronal annealing on the evolution of hole traps in GaAsN epilayers grown by metalorganic chemical vapor deposition 等时退火对金属有机化学气相沉积制备的砷化镓薄膜空穴阱演化的影响
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242730
Q. Gao, H. Tan, C. Jagadish, P. Deenapanray
{"title":"Influence of isochronal annealing on the evolution of hole traps in GaAsN epilayers grown by metalorganic chemical vapor deposition","authors":"Q. Gao, H. Tan, C. Jagadish, P. Deenapanray","doi":"10.1109/SIM.2002.1242730","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242730","url":null,"abstract":"The evolution of electrically active defects in rapid thermally annealed p-type GaAsN epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) was studied by deep level transient spectroscopy (DLTS). A continuous distribution of hole traps and an overlapping minority carrier trap are observed in the as-grown layers. Six hole traps HA1 (E/sub V/+0.22 eV), HA2 (E/sub V/+0.32 eV), HA3 (E/sub V/+0.38 eV), HA4 (E/sub V/+0.39 eV), HA5 (E/sub V/+0.55 eV), and HA6 (E/sub V/+0.78 eV) were created by rapid thermal annealing (RTA) in the temperature range of 600/spl deg/C-900/spl deg/C for 30 s. Most of these defects are stable at 900/spl deg/C, although their relative concentrations varied over the RTA temperature. The origin of these hole traps was studied based on previously reported hole traps in the literature.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115582258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Leakage currents in GaAs/AlGaAs-based buried-heterostructure laser diodes with semi-insulating GaInP:Fe burying layer 半绝缘GaInP:Fe埋层GaAs/ algaas基埋置异质结构激光二极管的漏电流
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242763
C. Barrios, S. Lowdudoss
{"title":"Leakage currents in GaAs/AlGaAs-based buried-heterostructure laser diodes with semi-insulating GaInP:Fe burying layer","authors":"C. Barrios, S. Lowdudoss","doi":"10.1109/SIM.2002.1242763","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242763","url":null,"abstract":"Leakage currents in the recently demonstrated GaAs/AIGds buriedheterostructure in-plane lasers (IPLs) and 17CSELs with semi-insulating (So Ga1nP:Fe buying layer are experimentally and theoretically analysed. Analysis of the static characteristics and electroluminescence measurements indicate the existence of current paths through the SI buying-mnteriol. Two-dimensional simulations allow to idenfib the Ieokage mechanism.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126197435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Properties of GaAs/Si heterostructure material fabricated by low temperature wafer bonding using a spin-on-glass intermediate layer 玻璃自旋中间层低温晶圆键合制备GaAs/Si异质结构材料的性能
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242739
G. Deligeorgis, S. Gallis, M. Androulidaki, D. Cengher, Z. Hatzopoulos, M. Alexe, V. Dragoi, E. Kyriakis-Bitzaros, G. Halkias, F. Peiró, A. Georgakilas
{"title":"Properties of GaAs/Si heterostructure material fabricated by low temperature wafer bonding using a spin-on-glass intermediate layer","authors":"G. Deligeorgis, S. Gallis, M. Androulidaki, D. Cengher, Z. Hatzopoulos, M. Alexe, V. Dragoi, E. Kyriakis-Bitzaros, G. Halkias, F. Peiró, A. Georgakilas","doi":"10.1109/SIM.2002.1242739","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242739","url":null,"abstract":"MBE grown GaAs wafers were bonded, using spin on glass, on CMOS and plain Si wafers, GaAs substrate was removed to provide a thin layer of GaAs material, on top of silicon, for device processing. Structural investigation of the GaAs filmoil was done using TEM. Material quality was further investigated using photoluminescence measurements. Built in strain was measured using photoreflectance measurements for a range of temperatures and compared to that of an epitaxially grown GaAs on Si. High quality material that is nearly stress free at room temperature was successfully integrated with Si using the proposed method.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125813318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Competitive capture and escape processes of electrically injected carriers in blue InGaN single quantum well light emitting diodes 蓝色InGaN单量子阱发光二极管中电注入载流子的竞争捕获和逃逸过程
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242764
A. Hori, D. Yasunaga, K. Fujiwara
{"title":"Competitive capture and escape processes of electrically injected carriers in blue InGaN single quantum well light emitting diodes","authors":"A. Hori, D. Yasunaga, K. Fujiwara","doi":"10.1109/SIM.2002.1242764","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242764","url":null,"abstract":"Tmprahre injecrion cumem dependence of elecmluminescence (EL) spechal inteusiw ofthe blue InGaN single q.tanfwn well (SQW) light mining diodes w . k ) with high recombination eficiemy has been sfdied over a wide /empenhire range (T = 15.300 K ) ond us function o/ i@e&m mar (0.1-IOmA). Itis fowulrhat, when TissIight[ydecreasedro 180KKfmm300K the EL inreus@ eficient!~ inoemer due to the improd qwntum H o w , with j d e r decrease of T beluw 100 K the EL e f i i m q h k t i cn l l y reduced at all he injection nurent levelr due fo duced c a \" captuve and population. n~ir EL redwtion involwr disapp-ance of injection w e n t depdent line shape changes (blue sh@) mused by bandfilling of the localized recombinolion centem appeamnCe of the GaN emirsion at 3. I e?' obsmed belav 100 K sugperLF that caniers are not ejjixtivefly m p w e d andpopuhted in the blue SQW &er, but @-&red to non-r&tive centers within GUN clad lqers. There rad& indicae thar the more @cienr \" e r capwe by SQW rather rhan Ly he non-mdiarrve reconibination caters in the clod &rs is uucio[ lo a h m e the radiaive mcomblwtion at 160-300 K","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121384669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical study of 4H-SiC irradiated with swift heavy ions 快速重离子辐照4H-SiC的电学研究
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242735
E. Kalinina, G. Onushkin, D. Davidov, A. Hallén, A. Konstantinov, V. Skuratov, J. Staňo
{"title":"Electrical study of 4H-SiC irradiated with swift heavy ions","authors":"E. Kalinina, G. Onushkin, D. Davidov, A. Hallén, A. Konstantinov, V. Skuratov, J. Staňo","doi":"10.1109/SIM.2002.1242735","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242735","url":null,"abstract":"Radiation defects and electrical properties in 4H-SiC epitaxial layer bombarded with 245 MeV Kr ions were studied by deep level transient spectroscopy (DLTS) and electrical resistivity measurements. Capacitance-, current- and charge-DLTS spectra show the presence mainly of Z/sub 1/ (0.66 eV) deep levels similar to those obtained for electrons, neutrons or light ions. The temperature dependence of electrical resistivity of Schottky barriers is characterized by two stages not observed previously in silicon carbide for conventional type of irradiation.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134592140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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