Leakage currents in GaAs/AlGaAs-based buried-heterostructure laser diodes with semi-insulating GaInP:Fe burying layer

Abstract

Leakage currents in the recently demonstrated GaAs/AIGds buriedheterostructure in-plane lasers (IPLs) and 17CSELs with semi-insulating (So Ga1nP:Fe buying layer are experimentally and theoretically analysed. Analysis of the static characteristics and electroluminescence measurements indicate the existence of current paths through the SI buying-mnteriol. Two-dimensional simulations allow to idenfib the Ieokage mechanism.