Competitive capture and escape processes of electrically injected carriers in blue InGaN single quantum well light emitting diodes

Tmprahre injecrion cumem dependence of elecmluminescence (EL) spechal inteusiw ofthe blue InGaN single q.tanfwn well (SQW) light mining diodes w . k ) with high recombination eficiemy has been sfdied over a wide /empenhire range (T = 15.300 K ) ond us function o/ i@e&m mar (0.1-IOmA). Itis fowulrhat, when TissIight[ydecreasedro 180KKfmm300K the EL inreus@ eficient!~ inoemer due to the improd qwntum H o w , with j d e r decrease of T beluw 100 K the EL e f i i m q h k t i cn l l y reduced at all he injection nurent levelr due fo duced c a " captuve and population. n~ir EL redwtion involwr disapp-ance of injection w e n t depdent line shape changes (blue sh@) mused by bandfilling of the localized recombinolion centem appeamnCe of the GaN emirsion at 3. I e?' obsmed belav 100 K sugperLF that caniers are not ejjixtivefly m p w e d andpopuhted in the blue SQW &er, but @-&red to non-r&tive centers within GUN clad lqers. There rad& indicae thar the more @cienr " e r capwe by SQW rather rhan Ly he non-mdiarrve reconibination caters in the clod &rs is uucio[ lo a h m e the radiaive mcomblwtion at 160-300 K