玻璃自旋中间层低温晶圆键合制备GaAs/Si异质结构材料的性能

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242739

G. Deligeorgis, S. Gallis, M. Androulidaki, D. Cengher, Z. Hatzopoulos, M. Alexe, V. Dragoi, E. Kyriakis-Bitzaros, G. Halkias, F. Peiró, A. Georgakilas

{"title":"玻璃自旋中间层低温晶圆键合制备GaAs/Si异质结构材料的性能","authors":"G. Deligeorgis, S. Gallis, M. Androulidaki, D. Cengher, Z. Hatzopoulos, M. Alexe, V. Dragoi, E. Kyriakis-Bitzaros, G. Halkias, F. Peiró, A. Georgakilas","doi":"10.1109/SIM.2002.1242739","DOIUrl":null,"url":null,"abstract":"MBE grown GaAs wafers were bonded, using spin on glass, on CMOS and plain Si wafers, GaAs substrate was removed to provide a thin layer of GaAs material, on top of silicon, for device processing. Structural investigation of the GaAs filmoil was done using TEM. Material quality was further investigated using photoluminescence measurements. Built in strain was measured using photoreflectance measurements for a range of temperatures and compared to that of an epitaxially grown GaAs on Si. High quality material that is nearly stress free at room temperature was successfully integrated with Si using the proposed method.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Properties of GaAs/Si heterostructure material fabricated by low temperature wafer bonding using a spin-on-glass intermediate layer\",\"authors\":\"G. Deligeorgis, S. Gallis, M. Androulidaki, D. Cengher, Z. Hatzopoulos, M. Alexe, V. Dragoi, E. Kyriakis-Bitzaros, G. Halkias, F. Peiró, A. Georgakilas\",\"doi\":\"10.1109/SIM.2002.1242739\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MBE grown GaAs wafers were bonded, using spin on glass, on CMOS and plain Si wafers, GaAs substrate was removed to provide a thin layer of GaAs material, on top of silicon, for device processing. Structural investigation of the GaAs filmoil was done using TEM. Material quality was further investigated using photoluminescence measurements. Built in strain was measured using photoreflectance measurements for a range of temperatures and compared to that of an epitaxially grown GaAs on Si. High quality material that is nearly stress free at room temperature was successfully integrated with Si using the proposed method.\",\"PeriodicalId\":109480,\"journal\":{\"name\":\"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.2002.1242739\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.2002.1242739","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

MBE生长的GaAs晶圆被键合，在玻璃、CMOS和普通硅晶圆上使用自旋，去除GaAs衬底，在硅上提供一层薄的GaAs材料，用于器件加工。用透射电镜对薄膜结构进行了研究。通过光致发光测量进一步研究了材料的质量。在一定温度范围内，使用光反射率测量测量了内建应变，并与在Si上外延生长的GaAs进行了比较。利用该方法成功地将室温下几乎无应力的高质量材料与Si结合在一起。

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Properties of GaAs/Si heterostructure material fabricated by low temperature wafer bonding using a spin-on-glass intermediate layer

MBE grown GaAs wafers were bonded, using spin on glass, on CMOS and plain Si wafers, GaAs substrate was removed to provide a thin layer of GaAs material, on top of silicon, for device processing. Structural investigation of the GaAs filmoil was done using TEM. Material quality was further investigated using photoluminescence measurements. Built in strain was measured using photoreflectance measurements for a range of temperatures and compared to that of an epitaxially grown GaAs on Si. High quality material that is nearly stress free at room temperature was successfully integrated with Si using the proposed method.

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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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