Optical properties of group-III nitride based quantum wells

Abstract

Quantum wells based on hexagonal group-IN nitrides have numerous original properties. III particular, inrernnl electric Jklds are present along rhe growrh axis, r-eoching several MV/cm. The coniperifion between radiorive and nowadiative recombinations ofelectron-hole pairs in rhese novel nano-objecrs is analysed by nrensuriizg rhe rime-resolvedphotoluminesceIice of series of samples. The respective influences of electric fields and localisatioii of carriers, on the opricalproperries oflnGaN/GaN quantum wells, are unravelled. The scaling luw obsefved fbphofoluminescence rime decays arid the giant coiipling behveen LOphonons arid elecrron-hole pairs alp interpreted in terms of an original and efticieiit description o/the mechanisms involved in optical reronibinations.