发布求助
文献互助 智能选刊 最新文献

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.最新文献

筛选
英文 中文
Photoclectronic properties of InGaAs/GaAs heterostructures with combined quantum well and self-organized quantum dot layers 结合量子阱和自组织量子点层的InGaAs/GaAs异质结构的光电性质
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242765
I. A. Karpovich, S. Levichev, N. V. Baidus, B. Zvonkov, D. Filatov
{"title":"Photoclectronic properties of InGaAs/GaAs heterostructures with combined quantum well and self-organized quantum dot layers","authors":"I. A. Karpovich, S. Levichev, N. V. Baidus, B. Zvonkov, D. Filatov","doi":"10.1109/SIM.2002.1242765","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242765","url":null,"abstract":"The efect of overgrowth of the sel/-assembled ItiAs quanrirni dots (QDs) by In,Ga,,As quantum well (QW) of drflerent coniposition and thickness and 6y GaAs layer on the ground state transition energy (Eo) and the QD photoluminescence (PL) n'us investigated. The str~ic~ures were grown by Atmospheric Pressure Metal Organic Vapor Phase Epitary (AP-MOVPE). It wus shown. that the Eo(QD) decreases down to 0.78 eVat the room temperntior in the structures wilh a siirface com6i11ed QW/QD layers. An additiorial thin (5 rim) GaAs layayer permits to preserve the higli PL intensin, ut small increase of Eo(QD). The heterostrirctures nlitlz the PL liuewidtli of 30 nieVat 1.5 pnz were obtained..","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"371 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115905190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chareterization of GaN/InGaN hetero-structures by SEM and CL GaN/InGaN异质结构的SEM和CL表征
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242729
R. Fornari, M. Bosi, M. Avella, E. Martín, J. Jiménez
{"title":"Chareterization of GaN/InGaN hetero-structures by SEM and CL","authors":"R. Fornari, M. Bosi, M. Avella, E. Martín, J. Jiménez","doi":"10.1109/SIM.2002.1242729","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242729","url":null,"abstract":"GaN and InGaN epilayers were deposited on (0001) sapphire in a vertical reactor using Ammonia, TMG and TMI precursors. Smooth GaN layers (roughness <5 nm) were obtained for growth at 1080/spl deg/C, while depositions at higher temperatures gave rougher surfaces. The cathodoluminescence (CL) investigation showed that rougher GaN layers are also less uniform from the point of view of optical emission. Two main luminescence peaks (at about 358 nm and 378 nm) were observed in most films, but their spatial correlation and relative intensity were seen to change according to surface roughness. All tested samples were free from yellow band. InGaN samples (with an In fraction of 14%) appeared to be more uniform in terms of luminescence at the microscopic scale.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114672023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-bandgap nitrides: Issues and applications 低带隙氮化物:问题和应用
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242766
C. Tu
{"title":"Low-bandgap nitrides: Issues and applications","authors":"C. Tu","doi":"10.1109/SIM.2002.1242766","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242766","url":null,"abstract":"Nitrogen incorporation in Ill-V compounds reduces rhe bandgop. changes the conducrion band offiet, and even changes the band stmcture. Here w,e report the use of low-bandgap GaInNAs as rhe base of a heferojuricrion bipolar tramistor (HBr). which exhibits a lower turn-on voltage than HBTs with the usual GnAs base. InNAsP/GalnAsP quantum wells grown on InP are superior for longwavelenglh microdisk lasers. as compared Io GalnAs/GalnAsP quanruni wells, because of the larger conduction band ofset. Incorporating N into GalnP barriers in a GaAs quantum well is shown to lower the conduction band @et, and GalnNP/GaAs could be potentially ideally suited for npn HBTs. Incorporating a small amount o f N in G a N Z , alloys leads to a direct bandgap behavior of GaNP, and red light-emitting diodes grown directly on (100) GnP substrates have been fabricated.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126769360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The photoluminescence studies of high purity InP 高纯度InP的光致发光研究
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242750
B. Surma, A. Wnuk, F. Dubecký, M. Piersa, A. Hruban
{"title":"The photoluminescence studies of high purity InP","authors":"B. Surma, A. Wnuk, F. Dubecký, M. Piersa, A. Hruban","doi":"10.1109/SIM.2002.1242750","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242750","url":null,"abstract":"","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125004686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development and performance of imaging radiation detector based on semi-insulating GaAs: Application in /spl gamma/-ray computer tomograph for industrial purposes 基于半绝缘GaAs的成像辐射探测器的研制与性能:在工业用/spl伽马/射线计算机层析成像中的应用
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242767
F. Dubecký, B. Zat’ko, V. Nečas, P. Scepko, M. Gajtanská, M. Sekáčová, A. Perd'ochova, V. Sekerka, J. Huran, P. Boháček, M. Hudec
{"title":"Development and performance of imaging radiation detector based on semi-insulating GaAs: Application in /spl gamma/-ray computer tomograph for industrial purposes","authors":"F. Dubecký, B. Zat’ko, V. Nečas, P. Scepko, M. Gajtanská, M. Sekáčová, A. Perd'ochova, V. Sekerka, J. Huran, P. Boháček, M. Hudec","doi":"10.1109/SIM.2002.1242767","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242767","url":null,"abstract":"","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"1014 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116457007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of GaAs and InP MSM detectors for detection of pulsed X-ray emission from laser plasmas 用于激光等离子体脉冲x射线发射探测的GaAs和InP MSM探测器的评价
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242771
L. Ryć, F. Dubecký, M. Pfeifer, B. Pura, F. Riesz, W. Słysz
{"title":"Evaluation of GaAs and InP MSM detectors for detection of pulsed X-ray emission from laser plasmas","authors":"L. Ryć, F. Dubecký, M. Pfeifer, B. Pura, F. Riesz, W. Słysz","doi":"10.1109/SIM.2002.1242771","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242771","url":null,"abstract":"I Institute of Plasma Physics and Laser Microfusion, Hery 23, P.O. Box 49, 00-908 Warsaw, Poland, e-mail: ryc@ifpilm.waw.pl Institute of Electrical Engineering, SAS, Dubravska testa 9, SK-84239 Bratislava, Slovakia ’ Institute of Physics, ASCR, Na Slovance 2, 162 21 Prague 8, Czech Republic Faculty of Physics, Warsaw University of Technology, Koszykowa 15,OO-662 Warsaw, Poland ’ Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O. Box 49, H-1525 Budapest, Hungary Institute of Electron Technology, AI. Lotnik6w 32146.02-668 Warsaw, Poland","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134495653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-dimensional mapping of composition in bulk In/sub x/Ga/sub 1-x/As crystals using photoluminescence 利用光致发光技术对块状in /sub -x/ Ga/sub - 1-x/As晶体中的成分进行二维映射
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242754
M.R. Islam, M. Suzuki, P. Verma, M. Yamada, M. Tatsumi, Y. Hanaue, K. Kinoshita
{"title":"Two-dimensional mapping of composition in bulk In/sub x/Ga/sub 1-x/As crystals using photoluminescence","authors":"M.R. Islam, M. Suzuki, P. Verma, M. Yamada, M. Tatsumi, Y. Hanaue, K. Kinoshita","doi":"10.1109/SIM.2002.1242754","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242754","url":null,"abstract":"Two-dimensional variation of conlposition in bulk In,Gal,As crystals was investigated using n computer-controlled scanning photoluminescence (PL) mapping system. The accuracy o/PL results was confirmed by comparing with rhe results obtained from the standard technique of chemical analysis. It was further studied that the drastic changes in PL peak intensity is associated with the change in crystal orienrarion.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124870365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lattice stress gradient formation in oxide films deposited on substrates when used sputtering techniques 使用溅射技术沉积在衬底上的氧化膜中晶格应力梯度的形成
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242742
P. Šutta
{"title":"Lattice stress gradient formation in oxide films deposited on substrates when used sputtering techniques","authors":"P. Šutta","doi":"10.1109/SIM.2002.1242742","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242742","url":null,"abstract":"","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121526633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical properties of semi-insulating GaAS irradiated with neutrons 中子辐照半绝缘GaAS的电学特性
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242720
P. Boháček, M. Morvic, J. Betkó, F. Dubecký, J. Huran
{"title":"Electrical properties of semi-insulating GaAS irradiated with neutrons","authors":"P. Boháček, M. Morvic, J. Betkó, F. Dubecký, J. Huran","doi":"10.1109/SIM.2002.1242720","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242720","url":null,"abstract":"Conductivity, Hall mobility and magnetoresistance in semi-insulating (SI) GaAs samples irradiated with neutrons of various fluences ranging from 1/spl times/10/sup 17/ to 3/spl times/10/sup 19/ m/sup -2/ were measured and analysed in the temperature range 300-420 K. The magnetoresistance increases while the conductivity and the apparent Hall mobility decrease with increasing neutron fluence. The electron (n) to hole (p) concentration ratio resulting from the analysis of the room temperature parameters using a mixed conductivity model decreases with increasing neutron fluence as far as the ratio n/p exhibits values less than one at the highest fluences used. No remarkable differences were observed between activation energies for deep donors in samples with n/p>1 and that for deep acceptors in samples with n/p<1 deduced from the temperature dependences of the free charge carriers concentration. The role of thermal neutron shielding at irradiation, using a Cd-plate, is discussed.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123173982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
On the alpha particle induced degradation in n-type GaAs layers α粒子在n型砷化镓层中诱导降解的研究
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242746
N. Arpatzanis, G. Constantinidis, A. Georgakilas, G. Papaioannou, M. Papastamatiou
{"title":"On the alpha particle induced degradation in n-type GaAs layers","authors":"N. Arpatzanis, G. Constantinidis, A. Georgakilas, G. Papaioannou, M. Papastamatiou","doi":"10.1109/SIM.2002.1242746","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242746","url":null,"abstract":"We have invessrigated the effects of He-ion irradiation f rom an *“Am source (5.4MeP7, in n-type GaAs layers grown by molecular beam epiruxy (MBE). The induced damage is via displacement ond the carrier removal rate does not depend on the doping level of the irradiated layers. Five d$Jeerenf deep levels are produced but only two of them are most likely resparisible for the observed degradation. They lie at 0.2SeV and 0.36eV f rom rhe conduction band, respectively. Their introducrion rare is snmller for the highly doped samples, thus these samples seem to he more tolerant. We have identifed the induced deep levels by comparing their Amhenitis signatures with those ofknown ones, cited in the Iirerdwe. I! is suggested rhar rhe He-ios irradiation induced ievels are point defects.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114631511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信