Photoclectronic properties of InGaAs/GaAs heterostructures with combined quantum well and self-organized quantum dot layers

Abstract

The efect of overgrowth of the sel/-assembled ItiAs quanrirni dots (QDs) by In,Ga,,As quantum well (QW) of drflerent coniposition and thickness and 6y GaAs layer on the ground state transition energy (Eo) and the QD photoluminescence (PL) n'us investigated. The str~ic~ures were grown by Atmospheric Pressure Metal Organic Vapor Phase Epitary (AP-MOVPE). It wus shown. that the Eo(QD) decreases down to 0.78 eVat the room temperntior in the structures wilh a siirface com6i11ed QW/QD layers. An additiorial thin (5 rim) GaAs layayer permits to preserve the higli PL intensin, ut small increase of Eo(QD). The heterostrirctures nlitlz the PL liuewidtli of 30 nieVat 1.5 pnz were obtained..