α粒子在n型砷化镓层中诱导降解的研究

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242746

N. Arpatzanis, G. Constantinidis, A. Georgakilas, G. Papaioannou, M. Papastamatiou

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引用次数: 0

摘要

本文研究了* " Am源(5.4MeP7)辐照对分子束外渗法(MBE)生长的n型GaAs层的影响。诱导损伤是通过位移引起的，载流子去除率不依赖于辐照层的掺杂水平。产生了5个$Jeerenf深度水平，但其中只有两个最有可能对所观察到的退化负责。它们分别位于离导带0.2SeV和0.36eV处。对于高掺杂的样品，它们的引入量较小，因此这些样品似乎具有更强的耐受性。我们通过比较他们的Amhenitis特征和那些在ierdwe中引用的已知的特征，确定了诱发的深层水平。我!认为He-ios辐照诱导能级为点缺陷。

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On the alpha particle induced degradation in n-type GaAs layers

We have invessrigated the effects of He-ion irradiation f rom an *“Am source (5.4MeP7, in n-type GaAs layers grown by molecular beam epiruxy (MBE). The induced damage is via displacement ond the carrier removal rate does not depend on the doping level of the irradiated layers. Five d$Jeerenf deep levels are produced but only two of them are most likely resparisible for the observed degradation. They lie at 0.2SeV and 0.36eV f rom rhe conduction band, respectively. Their introducrion rare is snmller for the highly doped samples, thus these samples seem to he more tolerant. We have identifed the induced deep levels by comparing their Amhenitis signatures with those ofknown ones, cited in the Iirerdwe. I! is suggested rhar rhe He-ios irradiation induced ievels are point defects.

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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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