结合量子阱和自组织量子点层的InGaAs/GaAs异质结构的光电性质

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242765

I. A. Karpovich, S. Levichev, N. V. Baidus, B. Zvonkov, D. Filatov

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引用次数: 0

摘要

研究了不同组成和厚度的In,Ga, As量子阱(QW)和6y GaAs层过度生长sel/-组装的tias量子点(QDs)对基态跃迁能(Eo)和QD光致发光(PL) n的影响。采用常压金属有机气相外膜(AP-MOVPE)培养结构。它被展示出来了。QW/QD层结构的Eo(QD)随室内温度降低至0.78 ev。额外的薄(5圈)GaAs层允许保持高PL强度，但Eo(QD)的增加很小。在1.5 pnz下得到了30 niv的异质结构。

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Photoclectronic properties of InGaAs/GaAs heterostructures with combined quantum well and self-organized quantum dot layers

The efect of overgrowth of the sel/-assembled ItiAs quanrirni dots (QDs) by In,Ga,,As quantum well (QW) of drflerent coniposition and thickness and 6y GaAs layer on the ground state transition energy (Eo) and the QD photoluminescence (PL) n'us investigated. The str~ic~ures were grown by Atmospheric Pressure Metal Organic Vapor Phase Epitary (AP-MOVPE). It wus shown. that the Eo(QD) decreases down to 0.78 eVat the room temperntior in the structures wilh a siirface com6i11ed QW/QD layers. An additiorial thin (5 rim) GaAs layayer permits to preserve the higli PL intensin, ut small increase of Eo(QD). The heterostrirctures nlitlz the PL liuewidtli of 30 nieVat 1.5 pnz were obtained..

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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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