T. Ly Anh, A. Perd'ochova, V. Nečas, P. Boháček, M. Sekáčová
{"title":"Gamma-radiation hardness of bulk semi-insulating GaAs","authors":"T. Ly Anh, A. Perd'ochova, V. Nečas, P. Boháček, M. Sekáčová","doi":"10.1109/SIM.2002.1242774","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242774","url":null,"abstract":"Key electrical and detection characteristics of SI G d s radiation detectors prepared using substratesfrom three various suppliers and hyo d%ferent kinds of contacts are presented. Substrates are characterized by measuring the room temperature (RIJ conductivity and Hall mobiliry using van der Pauw technique. The I-Vcharacteristics of the detectors have been measured for both polarities at RT. Detectors were tested for detection parameters (energv resolution. charge collection and detection efficiency) using \"'Am and \"CO radiation sources. The base materials together with detectors have been exposed to severul gamma doses from 6oCo up to 30 kGy. Testing ofthe material and detector radiation hardness and stability ofdetection performances followed each exposure.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133112842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}