块状半绝缘砷化镓的γ辐射硬度

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242774

T. Ly Anh, A. Perd'ochova, V. Nečas, P. Boháček, M. Sekáčová

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引用次数: 0

摘要

介绍了采用三家不同供应商的衬底和三种不同触点制备的硅锗辐射探测器的主要电气和检测特性。利用范德保技术测量基材的室温(RIJ)电导率和霍尔迁移率。在rt下测量了探测器的两个极性的i - v特性。测试了探测器的探测参数(能量分辨率)。电荷收集和探测效率)使用“'Am和' CO辐射源。基础材料连同探测器都暴露在从60千兆赫到30千兆赫的几次伽马剂量下。每次曝光后测试材料和探测器的辐射硬度和检测性能的稳定性。

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Gamma-radiation hardness of bulk semi-insulating GaAs

Key electrical and detection characteristics of SI G d s radiation detectors prepared using substratesfrom three various suppliers and hyo d%ferent kinds of contacts are presented. Substrates are characterized by measuring the room temperature (RIJ conductivity and Hall mobiliry using van der Pauw technique. The I-Vcharacteristics of the detectors have been measured for both polarities at RT. Detectors were tested for detection parameters (energv resolution. charge collection and detection efficiency) using "'Am and "CO radiation sources. The base materials together with detectors have been exposed to severul gamma doses from 6oCo up to 30 kGy. Testing ofthe material and detector radiation hardness and stability ofdetection performances followed each exposure.

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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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