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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.最新文献

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A new concept for highly efficient THz photomixers based on quasi ballistic transport and thin LT-GaAs recombination layers 基于准弹道输运和薄LT-GaAs复合层的高效太赫兹光电混合器新概念
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242758
P. Kiesel, F. Renner, M. Eckardt, A. Schwanhausser, L. Robledo, A. Friedrich, P. Pohl, G. Dohler
{"title":"A new concept for highly efficient THz photomixers based on quasi ballistic transport and thin LT-GaAs recombination layers","authors":"P. Kiesel, F. Renner, M. Eckardt, A. Schwanhausser, L. Robledo, A. Friedrich, P. Pohl, G. Dohler","doi":"10.1109/SIM.2002.1242758","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242758","url":null,"abstract":"We report on a ~ J C W concept for highly eflcient THzphotomirers using the lurge carrier cross section of low temperature grown (LT-)GaAs. It is based on a periodic n-i-pn-i-p heterostructure with thin LT-GaAs layers incorporated bemeen the nand p-layers. The i-layers are optimized with regard to the generation and ballistic transport of photo-generated electrons in the built-in space chargefields with ballisticflight times smaller than a THz cycle. The LTlayers allow eflcient recombination of electrons and holm arriving from opposite directions in neighboringperiods. This concept is veryproniising to overcome the limitations of conventional photomixer concepts and is expected to exhibit improved THz outputpower as well as conversion efjiciency","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117242400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electric field distribution in chromium compensated GaAs 铬补偿砷化镓中的电场分布
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242718
A. Tyazhev, D. Budnitsky, O. Tolbanov
{"title":"Electric field distribution in chromium compensated GaAs","authors":"A. Tyazhev, D. Budnitsky, O. Tolbanov","doi":"10.1109/SIM.2002.1242718","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242718","url":null,"abstract":"Unlike conventional GaAs detector structures that use a space charge region (SCR) of a barrier structure, we propose to form a detector structure of resistor type on the base of GaAs compensated with Cr. In this case, the electric field distribution, /spl xi/(x), is not screened by the ion concentration in the SCR but it is defined only by the uniformity of the resistance value distribution in the structure. The experimental results on measurements of the electrophysical characteristics and the electric field distribution are presented. It is shown that in these structures the electric field distribution is uniform through the whole high-resistive layer thickness. The possibility of the achievement of high values of charge collection efficiency of gamma-radiation is demonstrated.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116223961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Space charge effects and carrier capture transient behaviour in semi-insulating GaAs and GaN 半绝缘GaAs和GaN中的空间电荷效应和载流子捕获瞬态行为
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242752
J. Vaitkus, E. Gaubas, V. Kažukauskas, Y. Lacroix, S. Sakai, K. Smith, J. Storasta, T. Wang
{"title":"Space charge effects and carrier capture transient behaviour in semi-insulating GaAs and GaN","authors":"J. Vaitkus, E. Gaubas, V. Kažukauskas, Y. Lacroix, S. Sakai, K. Smith, J. Storasta, T. Wang","doi":"10.1109/SIM.2002.1242752","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242752","url":null,"abstract":"J. Vaitkus', E. Gaubas', V. Kaiukauskasl, Y . Lacroix2, S. Sakai2, K. Smith', J. Storasta', and T. Wan$ ' Institute of Materials Science and Applied Research, Vilnius University, Sauletekio a1.9-111,2040 Vilnius, Lithuania; e-mail: juozas.vaitkus@ff.vu.It Satellite Venture Business Laboratory, Department of Electrical and Electronic Engineering, University of Tokushima, Japan; e-mail: sakai@ee.tokushima-u.ac.jp ' Department of Physics and Astronomy, University of Glasgow, e-mail: smith@aS.ph.gla.ac.uk.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123224817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Indication of minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface 表明在大块半绝缘GaAs/ as注入和LT MBE GaAs界面上有少量载流子萃取
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242748
F. Dubecký, B. Zat’ko, C. Ferrari, V. Šmatko, A. Forster, P. Kordos
{"title":"Indication of minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface","authors":"F. Dubecký, B. Zat’ko, C. Ferrari, V. Šmatko, A. Forster, P. Kordos","doi":"10.1109/SIM.2002.1242748","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242748","url":null,"abstract":"","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131779718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electronic spectrum of defects in SiOCH dielectric films measured by deep level transient spectroscopy 深能级瞬态光谱法测量SiOCH介电膜缺陷的电子谱
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242744
V.A. Ligatchev, T. Wong, B. Liu, Rusli
{"title":"Electronic spectrum of defects in SiOCH dielectric films measured by deep level transient spectroscopy","authors":"V.A. Ligatchev, T. Wong, B. Liu, Rusli","doi":"10.1109/SIM.2002.1242744","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242744","url":null,"abstract":"Resulrs of experimental investigations of atomic structure and electron spectrum of defect states of the carbon doped hydrogenated silicon-oxide (SiOCH) low-kfilms are presented, Atomic structure of the SiOCHfilms is an amorphous-crystalline mixture of the SiOi-like and the Sic-like phases. The SiO2-like phose is rohrlly amorphous, while the Sic-like phase is partially polycrysralline. The DLTS technique is applied for the experimental studies of the defects electron states distribution. A defect peak at 0.25 0.35 eV below conduction band bottom has been found in thefilms. The observedpeak can originate from by the silicon vacancy, doubly occupied wirh electrons, or Erlike centers appearance in the Sic-like amorphous-crystalline phose.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128854385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron and role trapping parameters of low-temperature-grown GaAs 低温生长GaAs的电子和作用俘获参数
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242759
J. Roux, J. Coutaz, S. Marcinkevičius, J. Siegert, M. Kamińska, A. Wołoś, A. Krotkus
{"title":"Electron and role trapping parameters of low-temperature-grown GaAs","authors":"J. Roux, J. Coutaz, S. Marcinkevičius, J. Siegert, M. Kamińska, A. Wołoś, A. Krotkus","doi":"10.1109/SIM.2002.1242759","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242759","url":null,"abstract":"J-F. Roux, J-L. Coutaz LAHC. Universitv of Savoie. 73 376 Le Bourget du i a c Cedex, France e-mail: roux@univ-savoie.fr and coutaz@univ-savoie.fr S. Marcinkevicius, J. Siegert IMIT, Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden e-mail: sm@optics.kth.se and js@optics.kth.se M. Kaminska, A. Wolos IEP, University of Warsaw, Hoza 69, 00-681 Warsaw, Poland e-mail: Maria.Kaminska@fuw.edu.pl, and Agnieszka. Wolos@fuw.edu.pl A. Krotkus Semiconductor Physics Institute, 2600, A.Gostauto 1 I, Vilnius, Lithuania e-mail: krotkus@uj.pfi.lt","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130820968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Group III-nitride devices for field effect based gas detection 基于场效应的气体检测用iii组氮化物装置
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242727
M. Eickhoff, J. Schalwig, O. Weidemann, L. Gorgens, G. Muller, M. Stutzmann
{"title":"Group III-nitride devices for field effect based gas detection","authors":"M. Eickhoff, J. Schalwig, O. Weidemann, L. Gorgens, G. Muller, M. Stutzmann","doi":"10.1109/SIM.2002.1242727","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242727","url":null,"abstract":"We report about recent results on the sensor properties of novel gas-sensing devices based on group III-nitride materials. (Pt)-Schottky diodes as well as gas sensitive AlGaN/GaN heterostructure field effect transistors are characterized with respect to their temperature dependent sensitivity towards hydrogen and other oxidizing or reducing gases. Further investigation of the transient behaviour of gas sensitive (Pt)-GaN Schottky contacts reveals that up to device temperatures of 150/spl deg/C hydrogen is stored on electronically active sites of the sensor system. We found hydrogen accumulation at the Pt/GaN interface accompanied by an accumulation of oxygen by elastic recoil detection analysis. GaN-based gas sensitive devices are demonstrated to combine high performance with a simple planar device processing technology.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127040220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Inspection of residual strain in GaAs single crystal as standard ingot form GaAs单晶标准锭形残余应变的检测
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242717
M. Yamada, T. Chu
{"title":"Inspection of residual strain in GaAs single crystal as standard ingot form","authors":"M. Yamada, T. Chu","doi":"10.1109/SIM.2002.1242717","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242717","url":null,"abstract":"Scanning infrared polariscope (SIRP) measurements have been made in LEC- and VGF-grown GaAs ingot crystals. It is demonstrated from the SIRP measurements that residual strain can be inspected as standard ingot form before slicing to wafer, although it is difficult for us to evaluate the absolute value of residual strain.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129466701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The fabrication and characterization of metal-oxide semiconductor field-effect transistors and gated diodes using (Ba/sub 0.5/,Sr/sub 0.5)TiO/sub 3/ gate dielectric 采用(Ba/sub 0.5/，Sr/sub 0.5)TiO/sub 3/栅极介质制备金属氧化物半导体场效应晶体管和门控二极管
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242773
Yu-Rung Liu, J. Lee
{"title":"The fabrication and characterization of metal-oxide semiconductor field-effect transistors and gated diodes using (Ba/sub 0.5/,Sr/sub 0.5)TiO/sub 3/ gate dielectric","authors":"Yu-Rung Liu, J. Lee","doi":"10.1109/SIM.2002.1242773","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242773","url":null,"abstract":"N-channel metal-oxide-semiconductor field eflect transistors (MOSFETs) using barium strontium titanate (Bao.rSro.s)TiOj (BST) as the gate dielectric are successfully fabricated. The BSTfilms are deposited by RF magnetron sputtering. The IDSVDS and I D ~ V G S characteristics are measured. The electron mobility is about 206.6 cm*/Vs. The subthreshold swing is about 136.7 m V/dec. The interjace trapped charge density D,, the surface recombination velocity, and the minority carrier lifetime in the field-inducedileplerion region measured from gated diodes are 4.87x10'4cm~2eY-'. 3.96xlod cm/s .and 1 . 2 x l 0 4 s , respectively.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129541624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoluminescence characterization of interface abruptness of GaAs/ AlGaAs quantum wells grown on [411]A and [100] GaAs substrates [411]A和[100]GaAs衬底上生长的GaAs/ AlGaAs量子阱界面突发性的光致发光特性
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242749
T. Kusano, A. Satake, K. Fujiwara, S. Shimomura, T. Kitada, S. Hiyamizu
{"title":"Photoluminescence characterization of interface abruptness of GaAs/ AlGaAs quantum wells grown on [411]A and [100] GaAs substrates","authors":"T. Kusano, A. Satake, K. Fujiwara, S. Shimomura, T. Kitada, S. Hiyamizu","doi":"10.1109/SIM.2002.1242749","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242749","url":null,"abstract":"","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115474938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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