Inspection of residual strain in GaAs single crystal as standard ingot form

Abstract

Scanning infrared polariscope (SIRP) measurements have been made in LEC- and VGF-grown GaAs ingot crystals. It is demonstrated from the SIRP measurements that residual strain can be inspected as standard ingot form before slicing to wafer, although it is difficult for us to evaluate the absolute value of residual strain.