The fabrication and characterization of metal-oxide semiconductor field-effect transistors and gated diodes using (Ba/sub 0.5/,Sr/sub 0.5)TiO/sub 3/ gate dielectric

Abstract

N-channel metal-oxide-semiconductor field eflect transistors (MOSFETs) using barium strontium titanate (Bao.rSro.s)TiOj (BST) as the gate dielectric are successfully fabricated. The BSTfilms are deposited by RF magnetron sputtering. The IDSVDS and I D ~ V G S characteristics are measured. The electron mobility is about 206.6 cm*/Vs. The subthreshold swing is about 136.7 m V/dec. The interjace trapped charge density D,, the surface recombination velocity, and the minority carrier lifetime in the field-inducedileplerion region measured from gated diodes are 4.87x10'4cm~2eY-'. 3.96xlod cm/s .and 1 . 2 x l 0 4 s , respectively.