低温生长GaAs的电子和作用俘获参数

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242759

J. Roux, J. Coutaz, S. Marcinkevičius, J. Siegert, M. Kamińska, A. Wołoś, A. Krotkus

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引用次数: 0

摘要

肯尼迪。面粉糊,J-L。Coutaz LAHC。Savoie大学，73 376 Le Bourget du ia c Cedex，法国e-mail: roux@univ-savoie.fr和coutaz@univ-savoie.fr . Marcinkevicius, J. Siegert IMIT，皇家理工学院，Electrum 229, 164 40 Kista，瑞典e-mail: sm@optics.kth.se和js@optics.kth.se . M. Kaminska, a. Wolos IEP，华沙大学，Hoza 69, 00-681华沙，波兰e-mail: Maria.Kaminska@fuw.edu.pl和Agnieszka。Wolos@fuw.edu.pl A. Krotkus半导体物理研究所，2600,A. gostauto 1 I，维尔纽斯，立陶宛电子邮件:krotkus@uj.pfi.lt

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Electron and role trapping parameters of low-temperature-grown GaAs

J-F. Roux, J-L. Coutaz LAHC. Universitv of Savoie. 73 376 Le Bourget du i a c Cedex, France e-mail: roux@univ-savoie.fr and coutaz@univ-savoie.fr S. Marcinkevicius, J. Siegert IMIT, Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden e-mail: sm@optics.kth.se and js@optics.kth.se M. Kaminska, A. Wolos IEP, University of Warsaw, Hoza 69, 00-681 Warsaw, Poland e-mail: Maria.Kaminska@fuw.edu.pl, and Agnieszka. Wolos@fuw.edu.pl A. Krotkus Semiconductor Physics Institute, 2600, A.Gostauto 1 I, Vilnius, Lithuania e-mail: krotkus@uj.pfi.lt

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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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