半绝缘GaAs和GaN中的空间电荷效应和载流子捕获瞬态行为

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242752

J. Vaitkus, E. Gaubas, V. Kažukauskas, Y. Lacroix, S. Sakai, K. Smith, J. Storasta, T. Wang

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引用次数: 2

摘要

J. Vaitkus'， E. Gaubas'， V. Kaiukauskasl, Y。Lacroix2, S. Sakai2, K. Smith'， J. Storasta'， T. Wan$ '，维尔纽斯大学材料科学与应用研究所，solletekio 1. 19 -111,2040立陶宛维尔纽斯;e-mail: juozas.vaitkus@ff.vu.It日本德岛大学电气电子工程系卫星创业实验室;格拉斯哥大学物理与天文学系，e-mail: smith@aS.ph.gla.ac.uk。

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Space charge effects and carrier capture transient behaviour in semi-insulating GaAs and GaN

J. Vaitkus', E. Gaubas', V. Kaiukauskasl, Y . Lacroix2, S. Sakai2, K. Smith', J. Storasta', and T. Wan$ ' Institute of Materials Science and Applied Research, Vilnius University, Sauletekio a1.9-111,2040 Vilnius, Lithuania; e-mail: juozas.vaitkus@ff.vu.It Satellite Venture Business Laboratory, Department of Electrical and Electronic Engineering, University of Tokushima, Japan; e-mail: sakai@ee.tokushima-u.ac.jp ' Department of Physics and Astronomy, University of Glasgow, e-mail: smith@aS.ph.gla.ac.uk.

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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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