Electronic spectrum of defects in SiOCH dielectric films measured by deep level transient spectroscopy

Resulrs of experimental investigations of atomic structure and electron spectrum of defect states of the carbon doped hydrogenated silicon-oxide (SiOCH) low-kfilms are presented, Atomic structure of the SiOCHfilms is an amorphous-crystalline mixture of the SiOi-like and the Sic-like phases. The SiO2-like phose is rohrlly amorphous, while the Sic-like phase is partially polycrysralline. The DLTS technique is applied for the experimental studies of the defects electron states distribution. A defect peak at 0.25 0.35 eV below conduction band bottom has been found in thefilms. The observedpeak can originate from by the silicon vacancy, doubly occupied wirh electrons, or Erlike centers appearance in the Sic-like amorphous-crystalline phose.