GaAs单晶标准锭形残余应变的检测

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242717

M. Yamada, T. Chu

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引用次数: 0

摘要

用扫描红外偏光仪(SIRP)对LEC和vgf生长的砷化镓锭晶体进行了测量。SIRP测量结果表明，残余应变可以作为标准锭形进行检测，但残余应变的绝对值难以确定。

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Inspection of residual strain in GaAs single crystal as standard ingot form

Scanning infrared polariscope (SIRP) measurements have been made in LEC- and VGF-grown GaAs ingot crystals. It is demonstrated from the SIRP measurements that residual strain can be inspected as standard ingot form before slicing to wafer, although it is difficult for us to evaluate the absolute value of residual strain.

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来源期刊

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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