{"title":"采用(Ba/sub 0.5/，Sr/sub 0.5)TiO/sub 3/栅极介质制备金属氧化物半导体场效应晶体管和门控二极管","authors":"Yu-Rung Liu, J. Lee","doi":"10.1109/SIM.2002.1242773","DOIUrl":null,"url":null,"abstract":"N-channel metal-oxide-semiconductor field eflect transistors (MOSFETs) using barium strontium titanate (Bao.rSro.s)TiOj (BST) as the gate dielectric are successfully fabricated. The BSTfilms are deposited by RF magnetron sputtering. The IDSVDS and I D ~ V G S characteristics are measured. The electron mobility is about 206.6 cm*/Vs. The subthreshold swing is about 136.7 m V/dec. The interjace trapped charge density D,, the surface recombination velocity, and the minority carrier lifetime in the field-inducedileplerion region measured from gated diodes are 4.87x10'4cm~2eY-'. 3.96xlod cm/s .and 1 . 2 x l 0 4 s , respectively.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The fabrication and characterization of metal-oxide semiconductor field-effect transistors and gated diodes using (Ba/sub 0.5/,Sr/sub 0.5)TiO/sub 3/ gate dielectric\",\"authors\":\"Yu-Rung Liu, J. Lee\",\"doi\":\"10.1109/SIM.2002.1242773\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"N-channel metal-oxide-semiconductor field eflect transistors (MOSFETs) using barium strontium titanate (Bao.rSro.s)TiOj (BST) as the gate dielectric are successfully fabricated. The BSTfilms are deposited by RF magnetron sputtering. The IDSVDS and I D ~ V G S characteristics are measured. The electron mobility is about 206.6 cm*/Vs. The subthreshold swing is about 136.7 m V/dec. The interjace trapped charge density D,, the surface recombination velocity, and the minority carrier lifetime in the field-inducedileplerion region measured from gated diodes are 4.87x10'4cm~2eY-'. 3.96xlod cm/s .and 1 . 2 x l 0 4 s , respectively.\",\"PeriodicalId\":109480,\"journal\":{\"name\":\"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.2002.1242773\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.2002.1242773","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
成功制备了以钛酸锶钡(Bao.rSro.s)TiOj (BST)为栅极介质的n沟道金属氧化物半导体场反射晶体管(mosfet)。采用射频磁控溅射法制备了bstm薄膜。测量了IDSVDS和I - D ~ V - G - S特性。电子迁移率约为206.6 cm*/Vs。阈下摆幅约为136.7 m V/dec。门控二极管测量的界面捕获电荷密度D、表面复合速度和场致激子区少数载流子寿命为4.87x10'4cm~2eY-'。3.96xlod cm/s。分别是2 x 1 0 4 s。
The fabrication and characterization of metal-oxide semiconductor field-effect transistors and gated diodes using (Ba/sub 0.5/,Sr/sub 0.5)TiO/sub 3/ gate dielectric
N-channel metal-oxide-semiconductor field eflect transistors (MOSFETs) using barium strontium titanate (Bao.rSro.s)TiOj (BST) as the gate dielectric are successfully fabricated. The BSTfilms are deposited by RF magnetron sputtering. The IDSVDS and I D ~ V G S characteristics are measured. The electron mobility is about 206.6 cm*/Vs. The subthreshold swing is about 136.7 m V/dec. The interjace trapped charge density D,, the surface recombination velocity, and the minority carrier lifetime in the field-inducedileplerion region measured from gated diodes are 4.87x10'4cm~2eY-'. 3.96xlod cm/s .and 1 . 2 x l 0 4 s , respectively.
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