发布求助
文献互助 智能选刊 最新文献

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.最新文献

筛选
英文 中文
Laser technology in the formation of AuPt and AuPtTi contacts 激光技术中形成的AuPt和AuPtTi触点
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242755
P. Machac, V. Myslík, V. Peřina, J. Zlámal
{"title":"Laser technology in the formation of AuPt and AuPtTi contacts","authors":"P. Machac, V. Myslík, V. Peřina, J. Zlámal","doi":"10.1109/SIM.2002.1242755","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242755","url":null,"abstract":"","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114835260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non-uniform photocurrent transport and tunneling resonances in composite InGaAs/AlGaAs and GaAs/AlGaAs quantum wells InGaAs/AlGaAs和GaAs/AlGaAs复合量子阱中的非均匀光电流输运和隧道共振
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242753
K. Kawasaki, K. Fujiwara, N. Sano
{"title":"Non-uniform photocurrent transport and tunneling resonances in composite InGaAs/AlGaAs and GaAs/AlGaAs quantum wells","authors":"K. Kawasaki, K. Fujiwara, N. Sano","doi":"10.1109/SIM.2002.1242753","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242753","url":null,"abstract":"Yertical tunneling transport o/photo-generoted carriers in U composite system incorporated with different @pes o/multiple-quont~m-n~~lls is experimentally investigated uf I S -300 K by photocurmi (PC) response measurements. In PC spectra of this novel siructure, pseudo-negative peaks are observed at exciton resononce wovelengihs. The negative peaks are definitely observed under low/ield and low remperature conditions. When ihe applied reverse bios is increased. howevec the dip depth instantaneously becomes to be flattened at the bios volroge o/r,.r* resononce ond the spectrol line-shape persisrs to be the same/oor further incremes o/ the reverse bias. These results of preudo-negative PC peaks w e n,eN explained by shodowing effects on the number of absorbed photons and by assuming rhe dominonce o/electron transport (IS orixins ofthe PC spectral feorum","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123285587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical characterization of hydrogenated n-type AlGaN 氢化n型AlGaN的电性质
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242724
D. Seghier, H. Gíslason
{"title":"Electrical characterization of hydrogenated n-type AlGaN","authors":"D. Seghier, H. Gíslason","doi":"10.1109/SIM.2002.1242724","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242724","url":null,"abstract":"We investigated two series of MOCVD-grown Al/sub x/Ga1-xN samples with Al compositions x=0.1 and x=0.3 before and after hydrogenation. Shallow and deep centers were investigated using electrical characterization methods. We observe a dominant donor level with a larger binding energy in the sample with x=0.3. We also observe interface defects between An and the AlGaN layer which become more significant with increasing x. Their presence is related to the high Al mole fraction which creates potential fluctuations at the surface of the sample. Hydrogenation results in (i) a partial passivation of the shallow donors, (ii) disappearance of interface defects, and (iii) creation of a new shallow donor center.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128685299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photocurrent and photoluminescence in Fe-doped InP 掺铁InP的光电流和光致发光
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242719
A. Alvarez, M. González, M. Avella, J. Jiménez, R. Fornari
{"title":"Photocurrent and photoluminescence in Fe-doped InP","authors":"A. Alvarez, M. González, M. Avella, J. Jiménez, R. Fornari","doi":"10.1109/SIM.2002.1242719","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242719","url":null,"abstract":"Photoluminescence (PL) and photocurrent (PC) signals in Fe-doped InP were modelled in order to understand the origin of the contrast in PL and PC maps in relation to the Fe distribution. The PL intensity is shown to be controlled by [Fe/sup 3+/]*[Fe/sup 2+/] while the PC intensity by the compensation ratio, [Fe/sub In/]/[Fe/sup 2+/].","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134095077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The capacitance-voltage characteristics of metal-ferroelectric-insulator-silicon structures for non-volatile memory applications 非易失性存储器用金属-铁电-绝缘体-硅结构的电容-电压特性
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242751
Chun-lin Hou, J. Lee
{"title":"The capacitance-voltage characteristics of metal-ferroelectric-insulator-silicon structures for non-volatile memory applications","authors":"Chun-lin Hou, J. Lee","doi":"10.1109/SIM.2002.1242751","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242751","url":null,"abstract":"The electrical characteristics of metal-ferroelectric-insulalor-silicon (MFIS) structures are studied. The ferroelectric layer is lead-zirconate-titanate (PZr) and the insulator layer is Ta,05. The orientation of the C-V hysteresis loop depends on both the polarization of the ferroelectric layer and the trapped charges injected into the insularor layer. These two effects are opposite to each other. The C-Vorientation is counterclockwise when the applied voltage is below 7 V and clockwise above 7 V The C-V memory window j r s t increases and then decreases with the applied sweep voltage. These phenomena are explained by the polarization and the charge trapping effects.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131831900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The role of semi-insulating GaAs detector topology in detection performance 半绝缘砷化镓探测器拓扑结构对探测性能的影响
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242768
A. Perd'ochova, F. Dubecký, T. Ly Anh, V. Nečas, P. Boháček, M. Sekáčová
{"title":"The role of semi-insulating GaAs detector topology in detection performance","authors":"A. Perd'ochova, F. Dubecký, T. Ly Anh, V. Nečas, P. Boháček, M. Sekáčová","doi":"10.1109/SIM.2002.1242768","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242768","url":null,"abstract":"In this paper, wepresent the results of an experimental study concerning diflerent LEC semi-insulating (SI) CaAs detectors of 300 pm thickness. We have investigated the influence of diflerent detector volumes and of a nitride bufler layer on the detection performances of detectors, using two gamma sources, '\"Am (59.5 k e v and \"CO (122.1 k e v . Following the possible applications of these detectors in digiral radiology systems, we concentrared on resting the performances in terms of leakage current, breakdown voltage, charge collection eflciency (CCE %) and relative energy resolution (FWHM %). The maximum value of CCE obtained was 70%. and the best value ofFWHMwas 9.3%. Evident dependence of electrical and spectroscopic perjon\"ces on the detector volume, known as 'SmaILpixel effect \", ispresented.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115844333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A step forward to the growth and characterization of compositionally homogeneous In/sub x/Ga/sub 1-x/As bulk crystal 组成均匀的In/sub x/Ga/sub 1-x/As块状晶体的生长和表征又向前迈进了一步
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242734
P. Verma, M.R. Islam, M. Yamada, Y. Hanaue, K. Kinoshita, M. Tatsumi
{"title":"A step forward to the growth and characterization of compositionally homogeneous In/sub x/Ga/sub 1-x/As bulk crystal","authors":"P. Verma, M.R. Islam, M. Yamada, Y. Hanaue, K. Kinoshita, M. Tatsumi","doi":"10.1109/SIM.2002.1242734","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242734","url":null,"abstract":"A possibility of tunable lattice matching makes bulk In/sub x/Ga/sub 1-x/As crystal an excellent substrate material for InGaAs-based optical communication devices. However, due to convection in the melt caused by the gravity, it is very difficult to grow a compositionally homogeneous In/sub x/Ga/sub 1-x/As single crystal on ground using the conventional growth techniques. Considering the shortcomings of the conventional growth methods, we have developed a novel growth technique, named as the traveling liquidus-zone method, which can be used to grow compositionally homogeneous In/sub x/Ga/sub 1-x/As single crystals in space, under the micro-gravity conditions. This new technique, which has some specific requirements about the starting material and the growth temperature profile, has been used on ground to carry out some preliminary growths. Since a precise evaluation of compositional profile is inevitable, the starting materials as well as the preliminarily grown crystals have been non-destructively characterized.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124705498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Direct determination of the built-in polarization field in InGaN/GaN quantum wells InGaN/GaN量子阱中内置偏振场的直接测定
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242723
R. Schmidt, P. Kiesel, M. Kneissl, C. G. Van de Walle, N. Johnson, F. Renner, G. Dohler
{"title":"Direct determination of the built-in polarization field in InGaN/GaN quantum wells","authors":"R. Schmidt, P. Kiesel, M. Kneissl, C. G. Van de Walle, N. Johnson, F. Renner, G. Dohler","doi":"10.1109/SIM.2002.1242723","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242723","url":null,"abstract":"Results of absorption and electroabsorption measurements on wurtzite (In)GaN light emitting diodes are reported. Despite the relatively high excitonic binding energy of 25 meV in GaN no pronounced excitonic features could be observed in the absorption spectra. Electroabsorption measurements were performed to study the field induced absorption changes both in the InGaN quantum wells and the GaN barriers. This technique allows precise determination of the strong internal field changes at the GaN/InGaN-hetero-interface that originate from strain-induced polarization and differences in spontaneous polarization. We find field-induced absorption changes as large as 7000 cm/sup -1/ below and almost 20000 cm/sup -1/ above the band edge. The deduced polarization fields vary between 1.1 and 1.4 MV/cm for indium concentrations in InGaN quantum wells ranging from 7% to 9%.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127228704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InP detectors for solar neutrino spectrometer 太阳中微子光谱仪用InP探测器
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242770
P. Pelfer, A. Owens
{"title":"InP detectors for solar neutrino spectrometer","authors":"P. Pelfer, A. Owens","doi":"10.1109/SIM.2002.1242770","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242770","url":null,"abstract":"","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125287474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
LT GaMnAs and GaMnN - Prospective materials for spintronics 自旋电子学的前景材料
12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI: 10.1109/SIM.2002.1242741
M. Kamińska, A. Twardowski
{"title":"LT GaMnAs and GaMnN - Prospective materials for spintronics","authors":"M. Kamińska, A. Twardowski","doi":"10.1109/SIM.2002.1242741","DOIUrl":"https://doi.org/10.1109/SIM.2002.1242741","url":null,"abstract":"The problem of intrinsic material limits imposed on the value of Curie femperature of some of diluted magnetic semiconducfors based on manganese is considered. I f is stressed that precipitations of alien manganese-relafedphases do not only limit the amount of manganese in diluted magnetic semiconducfors, but also i@rromagnetic ~ they may make i f diflcult to defermine the red origin of the obsemed firromagnetism. The position of Mn2*’J+ energy level within band sfrucmre of IN-Vsemiconducfor compounds is s h o w f o be crucial for the Curie temperature value. Only compounds wifh Mn’+’J/‘t energy level within valence band lead fo optimal conditions for high Curie temperature of III-V semiconductors compounds, that means such semiconductors can be simultaneol*rly ofp-fype conductivig and have manganese wifh high spin electron onfguration (S=5/2).","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127028930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信