{"title":"Non-uniform photocurrent transport and tunneling resonances in composite InGaAs/AlGaAs and GaAs/AlGaAs quantum wells","authors":"K. Kawasaki, K. Fujiwara, N. Sano","doi":"10.1109/SIM.2002.1242753","DOIUrl":null,"url":null,"abstract":"Yertical tunneling transport o/photo-generoted carriers in U composite system incorporated with different @pes o/multiple-quont~m-n~~lls is experimentally investigated uf I S -300 K by photocurmi (PC) response measurements. In PC spectra of this novel siructure, pseudo-negative peaks are observed at exciton resononce wovelengihs. The negative peaks are definitely observed under low/ield and low remperature conditions. When ihe applied reverse bios is increased. howevec the dip depth instantaneously becomes to be flattened at the bios volroge o/r,.r* resononce ond the spectrol line-shape persisrs to be the same/oor further incremes o/ the reverse bias. These results of preudo-negative PC peaks w e n,eN explained by shodowing effects on the number of absorbed photons and by assuming rhe dominonce o/electron transport (IS orixins ofthe PC spectral feorum","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.2002.1242753","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Yertical tunneling transport o/photo-generoted carriers in U composite system incorporated with different @pes o/multiple-quont~m-n~~lls is experimentally investigated uf I S -300 K by photocurmi (PC) response measurements. In PC spectra of this novel siructure, pseudo-negative peaks are observed at exciton resononce wovelengihs. The negative peaks are definitely observed under low/ield and low remperature conditions. When ihe applied reverse bios is increased. howevec the dip depth instantaneously becomes to be flattened at the bios volroge o/r,.r* resononce ond the spectrol line-shape persisrs to be the same/oor further incremes o/ the reverse bias. These results of preudo-negative PC peaks w e n,eN explained by shodowing effects on the number of absorbed photons and by assuming rhe dominonce o/electron transport (IS orixins ofthe PC spectral feorum