半绝缘砷化镓探测器拓扑结构对探测性能的影响

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242768

A. Perd'ochova, F. Dubecký, T. Ly Anh, V. Nečas, P. Boháček, M. Sekáčová

{"title":"半绝缘砷化镓探测器拓扑结构对探测性能的影响","authors":"A. Perd'ochova, F. Dubecký, T. Ly Anh, V. Nečas, P. Boháček, M. Sekáčová","doi":"10.1109/SIM.2002.1242768","DOIUrl":null,"url":null,"abstract":"In this paper, wepresent the results of an experimental study concerning diflerent LEC semi-insulating (SI) CaAs detectors of 300 pm thickness. We have investigated the influence of diflerent detector volumes and of a nitride bufler layer on the detection performances of detectors, using two gamma sources, '\"Am (59.5 k e v and \"CO (122.1 k e v . Following the possible applications of these detectors in digiral radiology systems, we concentrared on resting the performances in terms of leakage current, breakdown voltage, charge collection eflciency (CCE %) and relative energy resolution (FWHM %). The maximum value of CCE obtained was 70%. and the best value ofFWHMwas 9.3%. Evident dependence of electrical and spectroscopic perjon\"ces on the detector volume, known as 'SmaILpixel effect \", ispresented.","PeriodicalId":109480,"journal":{"name":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","volume":"110 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The role of semi-insulating GaAs detector topology in detection performance\",\"authors\":\"A. Perd'ochova, F. Dubecký, T. Ly Anh, V. Nečas, P. Boháček, M. Sekáčová\",\"doi\":\"10.1109/SIM.2002.1242768\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, wepresent the results of an experimental study concerning diflerent LEC semi-insulating (SI) CaAs detectors of 300 pm thickness. We have investigated the influence of diflerent detector volumes and of a nitride bufler layer on the detection performances of detectors, using two gamma sources, '\\\"Am (59.5 k e v and \\\"CO (122.1 k e v . Following the possible applications of these detectors in digiral radiology systems, we concentrared on resting the performances in terms of leakage current, breakdown voltage, charge collection eflciency (CCE %) and relative energy resolution (FWHM %). The maximum value of CCE obtained was 70%. and the best value ofFWHMwas 9.3%. Evident dependence of electrical and spectroscopic perjon\\\"ces on the detector volume, known as 'SmaILpixel effect \\\", ispresented.\",\"PeriodicalId\":109480,\"journal\":{\"name\":\"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.\",\"volume\":\"110 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.2002.1242768\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.2002.1242768","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了不同厚度为300pm的LEC半绝缘(SI) CaAs探测器的实验研究结果。我们研究了不同探测器体积和氮化物缓冲层对探测器探测性能的影响，使用两种伽马源，' Am (59.5 k e v)和' CO (122.1 k e v)。随着这些探测器在数字放射系统中的可能应用，我们集中在泄漏电流，击穿电压，电荷收集效率(CCE %)和相对能量分辨率(FWHM %)方面的性能测试。所得CCE最大值为70%。offwhm的最佳值为9.3%。电学和光谱学性能对探测器体积有明显的依赖性，称为“小像素效应”。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

The role of semi-insulating GaAs detector topology in detection performance

In this paper, wepresent the results of an experimental study concerning diflerent LEC semi-insulating (SI) CaAs detectors of 300 pm thickness. We have investigated the influence of diflerent detector volumes and of a nitride bufler layer on the detection performances of detectors, using two gamma sources, '"Am (59.5 k e v and "CO (122.1 k e v . Following the possible applications of these detectors in digiral radiology systems, we concentrared on resting the performances in terms of leakage current, breakdown voltage, charge collection eflciency (CCE %) and relative energy resolution (FWHM %). The maximum value of CCE obtained was 70%. and the best value ofFWHMwas 9.3%. Evident dependence of electrical and spectroscopic perjon"ces on the detector volume, known as 'SmaILpixel effect ", ispresented.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

自引率

0.00%

发文量