LT GaMnAs and GaMnN - Prospective materials for spintronics

Abstract

The problem of intrinsic material limits imposed on the value of Curie femperature of some of diluted magnetic semiconducfors based on manganese is considered. I f is stressed that precipitations of alien manganese-relafedphases do not only limit the amount of manganese in diluted magnetic semiconducfors, but also i@rromagnetic ~ they may make i f diflcult to defermine the red origin of the obsemed firromagnetism. The position of Mn2*’J+ energy level within band sfrucmre of IN-Vsemiconducfor compounds is s h o w f o be crucial for the Curie temperature value. Only compounds wifh Mn’+’J/‘t energy level within valence band lead fo optimal conditions for high Curie temperature of III-V semiconductors compounds, that means such semiconductors can be simultaneol*rly ofp-fype conductivig and have manganese wifh high spin electron onfguration (S=5/2).