掺铁InP的光电流和光致发光

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242719

A. Alvarez, M. González, M. Avella, J. Jiménez, R. Fornari

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引用次数: 1

摘要

本文对掺铁InP中的光致发光(PL)和光电流(PC)信号进行了建模，以了解PL和PC图中与铁分布相关的对比度的来源。光强受[Fe/sup 3+/]*[Fe/sup 2+/]控制，光强受补偿比[Fe/sub /]/[Fe/sup 2+/]控制。

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Photocurrent and photoluminescence in Fe-doped InP

Photoluminescence (PL) and photocurrent (PC) signals in Fe-doped InP were modelled in order to understand the origin of the contrast in PL and PC maps in relation to the Fe distribution. The PL intensity is shown to be controlled by [Fe/sup 3+/]*[Fe/sup 2+/] while the PC intensity by the compensation ratio, [Fe/sub In/]/[Fe/sup 2+/].

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来源期刊

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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