InGaAs/AlGaAs和GaAs/AlGaAs复合量子阱中的非均匀光电流输运和隧道共振

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242753

K. Kawasaki, K. Fujiwara, N. Sano

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摘要

通过光curmi (PC)响应测量，研究了不同@pes ~m-n~~ ls的U复合体系中o/光生载流子的垂直隧穿输运。在这种新结构的PC谱中，在激子共振织波峰处观察到伪负峰。负峰在低强度和低温条件下明显可见。当应用的反向bios增加时。然而，在BIOS电压0 /r时，dip深度立即变得平坦。R *共振和谱线形状保持不变或进一步增加反向偏置。这些前负PC峰的结果是通过对吸收光子数量的投影效应和假设PC谱谱的主导o/电子传递(IS)原点来解释的

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Non-uniform photocurrent transport and tunneling resonances in composite InGaAs/AlGaAs and GaAs/AlGaAs quantum wells

Yertical tunneling transport o/photo-generoted carriers in U composite system incorporated with different @pes o/multiple-quont~m-n~~lls is experimentally investigated uf I S -300 K by photocurmi (PC) response measurements. In PC spectra of this novel siructure, pseudo-negative peaks are observed at exciton resononce wovelengihs. The negative peaks are definitely observed under low/ield and low remperature conditions. When ihe applied reverse bios is increased. howevec the dip depth instantaneously becomes to be flattened at the bios volroge o/r,.r* resononce ond the spectrol line-shape persisrs to be the same/oor further incremes o/ the reverse bias. These results of preudo-negative PC peaks w e n,eN explained by shodowing effects on the number of absorbed photons and by assuming rhe dominonce o/electron transport (IS orixins ofthe PC spectral feorum

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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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