利用光致发光技术对块状in /sub -x/ Ga/sub - 1-x/As晶体中的成分进行二维映射

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. Pub Date : 2002-06-30 DOI:10.1109/SIM.2002.1242754

M.R. Islam, M. Suzuki, P. Verma, M. Yamada, M. Tatsumi, Y. Hanaue, K. Kinoshita

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引用次数: 0

摘要

利用计算机控制的扫描光致发光(PL)作图系统研究了大块in,Gal,As晶体中光致发光的二维变化。通过与化学分析标准技术所得结果的比较，证实了该方法的准确性。进一步研究发现，晶体取向的改变与PL峰强度的剧烈变化有关。

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Two-dimensional mapping of composition in bulk In/sub x/Ga/sub 1-x/As crystals using photoluminescence

Two-dimensional variation of conlposition in bulk In,Gal,As crystals was investigated using n computer-controlled scanning photoluminescence (PL) mapping system. The accuracy o/PL results was confirmed by comparing with rhe results obtained from the standard technique of chemical analysis. It was further studied that the drastic changes in PL peak intensity is associated with the change in crystal orienrarion.

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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

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